Olenych Igor B, Aksimentyeva Olena I, Monastyrskii Liubomyr S, Horbenko Yulia Yu, Partyka Maryan V
Department of Electronics and Computer Technologies (Сhair of Radioelectronics and Computer Systems), Ivan Franko National University of Lviv, 50 Dragomanov Street, 79005, Lviv, Ukraine.
Physical and Colloidal Chemistry Department, Ivan Franko National University of Lviv, 6 Kyrylo and Mefodiy Street, 79005, Lviv, Ukraine.
Nanoscale Res Lett. 2017 Dec;12(1):272. doi: 10.1186/s11671-017-2043-7. Epub 2017 Apr 13.
In this work, the hybrid structures were created by electrochemical etching of silicon wafer and deposition of reduced graphene oxide (RGO) on the porous silicon (PS) layer. With the help of SEM and AFM, the formation of hybrid PS-RGO structure was confirmed. By means of current-voltage characteristic analysis and impedance spectroscopy, we studied electrical characteristics of PS-RGO structures. The formation of photosensitive electrical barriers in hybrid structures was revealed. Temporal parameters and spectral characteristics of photoresponse in the 400-1100-nm wavelength range were investigated. The widening of spectral range of photosensitivity of the hybrid structures in short-wavelength range in comparison with single-crystal silicon was revealed. The obtained results broaden the prospects of application of the PS-RGO structures in photoelectronics.
在这项工作中，通过对硅片进行电化学蚀刻以及在多孔硅（PS）层上沉积还原氧化石墨烯（RGO）来制备混合结构。借助扫描电子显微镜（SEM）和原子力显微镜（AFM），证实了PS-RGO混合结构的形成。通过电流-电压特性分析和阻抗谱，我们研究了PS-RGO结构的电学特性。揭示了混合结构中光敏电势垒的形成。研究了在400 - 1100纳米波长范围内光响应的时间参数和光谱特性。揭示了与单晶硅相比，混合结构在短波长范围内光敏光谱范围的拓宽。所获得的结果拓宽了PS-RGO结构在光电子学中的应用前景。
