Department of Energy Engineering, School of Energy and Chemical Engineering, Perovtronics Research Center, Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology (UNIST) , 50 UNIST-gil, Ulju-gun, Ulsan 44919, South Korea.
Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH) , 77 Cheongam-ro, Pohang, Gyeongbuk 37673, South Korea.
ACS Appl Mater Interfaces. 2017 May 10;9(18):15652-15661. doi: 10.1021/acsami.7b04014. Epub 2017 Apr 27.
Developing semiconducting polymers that exhibit both strong charge transport capability via highly ordered structures and good processability in environmentally benign solvents remains a challenge. Given that furan-based materials have better solubility in various solvents than analogous thiophene-based materials, we have synthesized and characterized furanyl-diketopyrrolopyrrole polymer (PFDPPTT-Si) together with its thienyl-diketopyrrolopyrrole-based analogue (PTDPPTT-Si) to understand subtle changes induced by the use of furan instead of thiophene units. PTDPPTT-Si films processed in common chlorinated solvent exhibit a higher hole mobility (3.57 cm V s) than PFDPPTT-Si films (2.40 cm V s) under the same conditions; this greater hole mobility is a result of tightly aggregated π-stacking structures in PTDPPTT-Si. By contrast, because of its enhanced solubility, PFDPPTT-Si using chlorine-free solution processing results in a device with higher mobility (as high as 1.87 cm V s) compared to that of the corresponding device fabricated using PTDPPTT-Si. This mobility of 1.87 cm V s represents the highest performances among furan-containing polymers reported to the best of our knowledge for nonchlorinated solvents. Our study demonstrates an important step toward environmentally compatible electronics, and we expect the results of our study to reinvigorate the furan-containing semiconductors field.
开发既具有高度有序结构的强电荷传输能力又具有环境友好溶剂中良好加工性能的半导体聚合物仍然是一个挑战。鉴于呋喃基材料比类似的噻吩基材料在各种溶剂中具有更好的溶解性，我们已经合成并表征了呋喃二酮吡咯并吡咯聚合物（PFDPPTT-Si）及其噻吩二酮吡咯并吡咯基类似物（PTDPPTT-Si），以了解使用呋喃单元代替噻吩单元所引起的细微变化。在相同条件下，用常规氯化溶剂处理的 PTDPPTT-Si 薄膜的空穴迁移率（3.57 cm V s）高于 PFDPPTT-Si 薄膜的空穴迁移率（2.40 cm V s）；这种更高的空穴迁移率是由于 PTDPPTT-Si 中紧密聚集的π堆积结构。相比之下，由于其增强的溶解性，使用无氯溶液处理的 PFDPPTT-Si 导致器件的迁移率（高达 1.87 cm V s）高于使用 PTDPPTT-Si 制造的对应器件的迁移率。据我们所知，这种 1.87 cm V s 的迁移率是无氯化溶剂中报告的含呋喃聚合物的最高性能。我们的研究朝着环境兼容电子迈出了重要的一步，我们期望我们的研究结果能够重振含呋喃半导体领域。
