Key Laboratory of Drinking Water Science and Technology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences , Beijing 100085, P. R. China.
Zhejiang University of Technology, College of Environment , Hangzhou, Zhejiang 310032, P. R. China.
Langmuir. 2017 May 16;33(19):4694-4701. doi: 10.1021/acs.langmuir.7b00893. Epub 2017 May 5.
Nanostructured g-CN/BiVO composite films with an enhanced photoelectrochemical (PEC) performance have been fabricated via the facile electrospinning technique. The g-CN nanosheets can not only form heterojunctions with BiVO but also prevent the agglomeration of BiVO, helping the formation of nanostructures. The as-prepared g-CN/BiVO films exhibit good coverage and stability. The PEC performance of the g-CN/BiVO films is much more enhanced compared with that for individual BiVO films because of the enhanced electron-hole separation. The photocurrent density is 0.44 mA/cm for g-CN/BiVO films at 0.56 V in the linear sweep current-voltage test, over 10 times higher than that of individual BiVO films (0.18 mA/cm). The effects of the preparation conditions including the g-CN content, collector temperature, calcination temperature, and electrospinning time on the PEC performance were investigated, and the reasons for the effects were proposed. The optimal preparation condition was with 3.9 wt % g-CN content in the electrospinning precursor, 185 °C collector temperature, 450 °C calcination temperature, and 40 min electrospinning time. The excellent PEC performance and the facile preparation method suggest that the g-CN/BiVO films are good candidates in energy and environmental remediation area.
通过简便的静电纺丝技术制备了具有增强光电化学（PEC）性能的纳米结构 g-CN/BiVO 复合薄膜。g-CN 纳米片不仅可以与 BiVO 形成异质结，还可以防止 BiVO 的聚集，有助于形成纳米结构。所制备的 g-CN/BiVO 薄膜具有良好的覆盖性和稳定性。与单独的 BiVO 薄膜相比，g-CN/BiVO 薄膜的 PEC 性能得到了很大的提高，因为电子-空穴的分离得到了增强。在 0.56 V 的线性扫描电流-电压测试中，g-CN/BiVO 薄膜的光电流密度为 0.44 mA/cm，比单独的 BiVO 薄膜（0.18 mA/cm）高 10 倍以上。研究了制备条件，包括 g-CN 含量、收集器温度、煅烧温度和静电纺丝时间对 PEC 性能的影响，并提出了影响的原因。最佳制备条件为：静电纺丝前驱体中 g-CN 含量为 3.9wt%，收集器温度为 185°C，煅烧温度为 450°C，静电纺丝时间为 40min。优异的 PEC 性能和简便的制备方法表明，g-CN/BiVO 薄膜在能源和环境修复领域具有良好的应用前景。
