Zhu Ying, He Liang, Ni Yiqiang, Li Genzhuang, Li Dongshuai, Lin Wang, Wang Qiliang, Li Liuan, Yang Haibin
State Key Laboratory of Superhard Material, College of Physics, Jilin University, Changchun 130012, China.
No. 5 Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou 510610, China.
Nanomaterials (Basel). 2022 Jul 11;12(14):2374. doi: 10.3390/nano12142374.
Graphitic carbon nitride (g-CN), a promising visible-light-responsive semiconductor material, is regarded as a fascinating photocatalyst and heterogeneous catalyst for various reactions due to its non-toxicity, high thermal durability and chemical durability, and "earth-abundant" nature. However, practical applications of g-CN in photoelectrochemical (PEC) and photoelectronic devices are still in the early stages of development due to the difficulties in fabricating high-quality g-CN layers on substrates, wide band gaps, high charge-recombination rates, and low electronic conductivity. Various fabrication and modification strategies of g-CN-based films have been reported. This review summarizes the latest progress related to the growth and modification of high-quality g-CN-based films. Furthermore, (1) the classification of synthetic pathways for the preparation of g-CN films, (2) functionalization of g-CN films at an atomic level (elemental doping) and molecular level (copolymerization), (3) modification of g-CN films with a co-catalyst, and (4) composite films fabricating, will be discussed in detail. Last but not least, this review will conclude with a summary and some invigorating viewpoints on the key challenges and future developments.
石墨相氮化碳(g-CN)是一种很有前景的可见光响应半导体材料,因其无毒、高热稳定性和化学稳定性以及“储量丰富”的特性,被视为一种用于各种反应的极具吸引力的光催化剂和多相催化剂。然而,由于在基底上制备高质量g-CN层存在困难、带隙宽、电荷复合率高以及电子电导率低等问题,g-CN在光电化学(PEC)和光电器件中的实际应用仍处于早期发展阶段。已有报道了各种基于g-CN薄膜的制备和改性策略。本文综述了与高质量g-CN基薄膜的生长和改性相关的最新进展。此外,还将详细讨论:(1)g-CN薄膜制备合成途径的分类;(2)g-CN薄膜在原子水平(元素掺杂)和分子水平(共聚)的功能化;(3)用助催化剂对g-CN薄膜进行改性;(4)复合薄膜的制备。最后但同样重要的是,本文将对关键挑战和未来发展进行总结并提出一些令人振奋的观点作为结语。