Tzou An-Jye, Chu Kuo-Hsiung, Lin I-Feng, Østreng Erik, Fang Yung-Sheng, Wu Xiao-Peng, Wu Bo-Wei, Shen Chang-Hong, Shieh Jia-Ming, Yeh Wen-Kuan, Chang Chun-Yen, Kuo Hao-Chung
Department of Electrophysics, National Chiao Tung University, Hsinchu, 30010, Taiwan.
National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu, 30078, Taiwan.
Nanoscale Res Lett. 2017 Dec;12(1):315. doi: 10.1186/s11671-017-2082-0. Epub 2017 Apr 27.
We report a low current collapse GaN-based high electron mobility transistor (HEMT) with an excellent thermal stability at 150 °C. The AlN was grown by N-based plasma enhanced atomic layer deposition (PEALD) and shown a refractive index of 1.94 at 633 nm of wavelength. Prior to deposit AlN on III-nitrides, the H/NH plasma pre-treatment led to remove the native gallium oxide. The X-ray photoelectron spectroscopy (XPS) spectroscopy confirmed that the native oxide can be effectively decomposed by hydrogen plasma. Following the in situ ALD-AlN passivation, the surface traps can be eliminated and corresponding to a 22.1% of current collapse with quiescent drain bias (V ) at 40 V. Furthermore, the high temperature measurement exhibited a shift-free threshold voltage (V ), corresponding to a 40.2% of current collapse at 150 °C. The thermal stable HEMT enabled a breakdown voltage (BV) to 687 V at high temperature, promising a good thermal reliability under high power operation.
我们报道了一种基于氮化镓的低电流崩塌高电子迁移率晶体管（HEMT），其在150°C时具有出色的热稳定性。氮化铝通过基于氮的等离子体增强原子层沉积（PEALD）生长，在波长633nm处的折射率为1.94。在III族氮化物上沉积氮化铝之前，氢/氨等离子体预处理可去除原生氧化镓。X射线光电子能谱（XPS）证实原生氧化物可被氢等离子体有效分解。原位原子层沉积氮化铝钝化后，表面陷阱可被消除，在40V的静态漏极偏置（V）下，电流崩塌率为22.1%。此外，高温测量显示阈值电压（V）无偏移，在150°C时电流崩塌率为40.2%。这种热稳定的HEMT在高温下的击穿电压（BV）达到687V，有望在高功率运行下具有良好的热可靠性。
