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钒薄膜中的大自旋霍尔角。

Large spin Hall angle in vanadium film.

作者信息

Wang T, Wang W, Xie Y, Warsi M A, Wu J, Chen Y, Lorenz V O, Fan X, Xiao J Q

机构信息

Department of Physics and Astronomy, University of Delaware, Newark, Delaware, 19716, USA.

Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois, 61801, USA.

出版信息

Sci Rep. 2017 May 2;7(1):1306. doi: 10.1038/s41598-017-01112-9.

Abstract

We report a large spin Hall angle observed in vanadium films sputter-grown at room temperature, which have small grain size and consist of a mixture of body centered tetragonal (bct) and body centered cubic (bcc) structures. The spin Hall angle is as large as θ  = -0.071 ± 0.003, comparable to that of platinum, θ  = 0.076 ± 0.007, and is much larger than that of bcc V film grown at 400 °C, θ  = -0.012 ± 0.002. Similar to β-tantalum and β-tungsten, the sputter-grown V films also have a high resistivity of more than 200 μΩ∙cm. Surprisingly, the spin diffusion length is still long at 16.3 nm. This finding not only indicates that specific crystalline structure can lead to a large spin Hall effect but also suggests 3d light metals should not be ruled out in the search for materials with large spin Hall angle.

摘要

我们报道了在室温下溅射生长的钒薄膜中观察到的大自旋霍尔角,这些薄膜晶粒尺寸小,由体心四方(bct)和体心立方(bcc)结构的混合物组成。自旋霍尔角高达θ = -0.071±0.003,与铂的自旋霍尔角θ = 0.076±0.007相当,并且比在400°C下生长的bcc V薄膜的自旋霍尔角θ = -0.012±0.002大得多。与β-钽和β-钨类似,溅射生长的V薄膜也具有超过200μΩ∙cm的高电阻率。令人惊讶的是,自旋扩散长度在16.3nm时仍然很长。这一发现不仅表明特定的晶体结构可以导致大的自旋霍尔效应,还表明在寻找具有大自旋霍尔角的材料时不应排除3d轻金属。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/db23/5430949/565bd93122dc/41598_2017_1112_Fig1_HTML.jpg

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