Shang Kuanping, Pathak Shibnath, Liu Guangyao, Feng Shaoqi, Li Siwei, Lai Weicheng, Yoo S J B
Opt Express. 2017 May 1;25(9):10474-10483. doi: 10.1364/OE.25.010474.
We designed and demonstrated a tri-layer SiN/SiO photonic integrated circuit capable of vertical interlayer coupling with arbitrary splitting ratios. Based on this multilayer photonic integrated circuit platform with each layer thicknesses of 150 nm, 50 nm, and 150 nm, we designed and simulated the vertical Y-junctions and 3D couplers with arbitrary power splitting ratios between 1:10 and 10:1 and with negligible(< -50 dB) reflection. Based on the design, we fabricated and demonstrated tri-layer vertical Y-junctions with the splitting ratios of 1:1 and 3:2 with excess optical losses of 0.230 dB. Further, we fabricated and demonstrated the 1 × 3 3D couplers with the splitting ratio of 1:1:4 for symmetric structures and variable splitting ratio for asymmetric structures.
我们设计并展示了一种能够以任意分光比进行垂直层间耦合的三层氮化硅/二氧化硅光子集成电路。基于这个每层厚度分别为150纳米、50纳米和150纳米的多层光子集成电路平台，我们设计并模拟了垂直Y型结和3D耦合器，其分光比在1:10至10:1之间任意可调，且反射可忽略不计（< -50分贝）。基于该设计，我们制造并展示了分光比为1:1和3:2的三层垂直Y型结，其额外光损耗为0.230分贝。此外，我们制造并展示了用于对称结构的分光比为1:1:4以及用于非对称结构的可变分光比的1×3 3D耦合器。
