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用于绝缘体上硅的任意比例超宽带片上功率分配器。

Ultra-broadband on-chip power splitters for arbitrary ratios on silicon-on-insulator.

作者信息

Liu Xiang, Sheng Zhen, Zhao Yingxuan, Gan Fuwan

出版信息

Opt Express. 2024 Jan 15;32(2):2029-2038. doi: 10.1364/OE.508058.

Abstract

We propose and demonstrate on-chip power splitters based on adiabatic rib waveguide enabling arbitrary splitting ratios on a monolithic silicon photonic platform. The devices are elaborately engineered based on adiabatic directional couplers with a trapezoid-structure in the longitudinal direction in the mode evolution region. The measurement results indicate that the proposed devices can achieve over 150 nm bandwidth for arbitrary splitting ratios of 50%:50%, 70%:30% and 90%:10%. The mode evolution footprint is greatly narrowed to below 79 µm with an insertion loss of less than 0.22 dB. The demonstrated arbitrary ratio power splitters offer a promising application prospect in high-density photonic integrated circuits.

摘要

我们提出并展示了基于绝热肋形波导的片上功率分配器,其能够在单片硅光子平台上实现任意的分配比。这些器件基于在模式演化区域纵向具有梯形结构的绝热定向耦合器精心设计而成。测量结果表明,对于50%:50%、70%:30%和90%:10%的任意分配比,所提出的器件可实现超过150 nm的带宽。模式演化足迹大幅缩小至79 µm以下,插入损耗小于0.22 dB。所展示的任意比例功率分配器在高密度光子集成电路中具有广阔的应用前景。

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