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温度依赖的准二维胶体硒化镉纳米板的光电性质。

Temperature-dependent optoelectronic properties of quasi-2D colloidal cadmium selenide nanoplatelets.

机构信息

School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore.

出版信息

Nanoscale. 2017 May 18;9(19):6595-6605. doi: 10.1039/c7nr00163k.

Abstract

Colloidal cadmium selenide (CdSe) nanoplatelets (NPLs) are a recently developed class of efficient luminescent nanomaterials suitable for optoelectronic device applications. A change in temperature greatly affects their electronic bandstructure and luminescence properties. It is important to understand how and why the characteristics of NPLs are influenced, particularly at elevated temperatures, where both reversible and irreversible quenching processes come into the picture. Here we present a study of the effect of elevated temperatures on the characteristics of colloidal CdSe NPLs. We used an effective-mass envelope function theory based 8-band k·p model and density-matrix theory considering exciton-phonon interaction. We observed the photoluminescence (PL) spectra at various temperatures for their photon emission energy, PL linewidth and intensity by considering the exciton-phonon interaction with both acoustic and optical phonons using Bose-Einstein statistical factors. With a rise in temperature we observed a fall in the transition energy (emission redshift), matrix element, Fermi factor and quasi Fermi separation, with a reduction in intraband state gaps and increased interband coupling. Also, there was a fall in the PL intensity, along with spectral broadening due to an intraband scattering effect. The predicted transition energy values and simulated PL spectra at varying temperatures exhibit appreciable consistency with the experimental results. Our findings have important implications for the application of NPLs in optoelectronic devices, such as NPL lasers and LEDs, operating much above room temperature.

摘要

胶体碲化镉(CdSe)纳米盘(NPL)是一类最近开发的高效发光纳米材料,适用于光电设备应用。温度的变化会极大地影响其电子能带结构和发光性能。了解 NPL 的特性是如何以及为何受到影响非常重要,特别是在高温下,其中包括可逆和不可逆猝灭过程。在这里,我们研究了高温对胶体 CdSe NPL 特性的影响。我们使用了基于有效质量包络函数理论的 8 带 k·p 模型和考虑激子-声子相互作用的密度矩阵理论。我们通过考虑激子-声子与声子和光学声子的相互作用,使用玻色-爱因斯坦统计因子,观察了不同温度下的光致发光(PL)光谱,以获得光子发射能、PL 线宽和强度。随着温度的升高,我们观察到跃迁能量(发射红移)、矩阵元、费米因子和准费米分离降低,同时带内态隙减小,带间耦合增加。此外,由于带内散射效应,PL 强度下降,光谱展宽。预测的跃迁能量值和模拟的 PL 光谱随温度变化与实验结果表现出相当大的一致性。我们的研究结果对 NPL 在高于室温运行的光电设备(如 NPL 激光器和 LED)中的应用具有重要意义。

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