College of Materials Science and Engineering; Institute for Graphene Applied Technology Innovation; Laboratory of Fiber Materials and Modern Textiles, the Growing Base for State Key Laboratory; Collaborative Innovation Center for Marine Biomass Fibers Materials and Textiles of Shandong Province, Qingdao University, Qingdao, 266071, China.
Shandong Institute of Nonmetal Materials, Jinan, 250031, China.
Sci Rep. 2017 May 8;7(1):1584. doi: 10.1038/s41598-017-01529-2.
Graphene oxide (GO) was rarely used as microwave absorption (MA) material due to its lower dielectric loss compared with reduced GO (RGO). However, the characteristics of low conductivity, light weight, and large surface area were beneficial to the impedance matching for absorbers already containing highly conductive metal materials. Cu@Ni nanowires are promising MA materials due to the desired dielectric loss from copper and excellent magnetic loss from nickel. However, the high density was an impediment to its further application. Combining Cu@Ni nanowires with GO should be an effective solution to decrease the absorber's density and improve its MA properties. Herein, we demonstrated that Cu@Ni nanowires/GO composites exhibited enhanced MA capacities compared with Cu@Ni nanowires or GO alone, and the minimum reflection loss reached -42.8 dB at 16.9 GHz with a thickness of 2.1 mm. The enhanced MA performance mainly originated from good impedance matching, as a result of the addition of low conductivity of GO. To confirm this point, the MA performance of Cu@Ni nanowires/RGO was studied, and unsurprisingly, weak MA performance was obtained. Our work provides a new strategy to decrease the density, broaden the frequency band and tune MA performance of composites.
氧化石墨烯（GO）由于其介电损耗比还原氧化石墨烯（RGO）低，因此很少用作微波吸收（MA）材料。然而，低电导率、轻重量和大表面积的特点有利于已经含有高导电性金属材料的吸收剂的阻抗匹配。Cu@Ni 纳米线由于铜的理想介电损耗和镍的优异磁损耗，是很有前途的 MA 材料。然而，高密度是其进一步应用的障碍。将 Cu@Ni 纳米线与 GO 结合应该是降低吸收剂密度并改善其 MA 性能的有效解决方案。本文中，我们证明了 Cu@Ni 纳米线/GO 复合材料表现出比 Cu@Ni 纳米线或 GO 单独使用时更好的 MA 性能，在厚度为 2.1mm 时，在 16.9GHz 时达到最小反射损耗-42.8dB。增强的 MA 性能主要源于良好的阻抗匹配，这是由于添加了低电导率的 GO。为了证实这一点，研究了 Cu@Ni 纳米线/RGO 的 MA 性能，不出所料，得到了较弱的 MA 性能。我们的工作为降低复合材料的密度、拓宽频带和调整 MA 性能提供了一种新策略。
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