Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca , Via R. Cozzi 55, IT-20125 Milano, Italy.
Nanochemistry Department, Istituto Italiano di Tecnologia , Via Morego 30, IT-16163 Genova, Italy.
ACS Nano. 2017 Jun 27;11(6):6233-6242. doi: 10.1021/acsnano.7b02369. Epub 2017 May 16.
The insertion of intentional impurities, commonly referred to as doping, into colloidal semiconductor quantum dots (QDs) is a powerful paradigm for tailoring their electronic, optical, and magnetic behaviors beyond what is obtained with size-control and heterostructuring motifs. Advancements in colloidal chemistry have led to nearly atomic precision of the doping level in both lightly and heavily doped QDs. The doping strategies currently available, however, operate at the ensemble level, resulting in a Poisson distribution of impurities across the QD population. To date, the synthesis of monodisperse ensembles of QDs individually doped with an identical number of impurity atoms is still an open challenge, and its achievement would enable the realization of advanced QD devices, such as optically/electrically controlled magnetic memories and intragap state transistors and solar cells, that rely on the precise tuning of the impurity states (i.e., number of unpaired spins, energy and width of impurity levels) within the QD host. The only approach reported to date relies on QD seeding with organometallic precursors that are intrinsically unstable and strongly affected by chemical or environmental degradation, which prevents the concept from reaching its full potential and makes the method unsuitable for aqueous synthesis routes. Here, we overcome these issues by demonstrating a doping strategy that bridges two traditionally orthogonal nanostructured material systems, namely, QDs and metal quantum clusters composed of a "magic number" of atoms held together by stable metal-to-metal bonds. Specifically, we use clusters composed of four copper atoms (Cu) capped with d-penicillamine to seed the growth of CdS QDs in water at room temperature. The elemental analysis, performed by electrospray ionization mass spectrometry, X-ray fluorescence, and inductively coupled plasma mass spectrometry, side by side with optical spectroscopy and transmission electron microscopy measurements, indicates that each Cu:CdS QD in the ensemble incorporates four Cu atoms originating from one Cu cluster, which acts as a "quantized" source of dopant impurities.
将有意杂质(通常称为掺杂)插入胶体半导体量子点(QD)中,是一种强大的范例,可以对其电子、光学和磁性能进行微调,超出通过尺寸控制和异质结构图案所获得的性能。胶体化学的进步使得在轻掺杂和重掺杂 QD 中几乎可以实现掺杂水平的原子级精度。然而,目前可用的掺杂策略在整体水平上起作用,导致杂质在 QD 群体中的分布呈泊松分布。迄今为止,仍然存在一个尚未解决的挑战,即单独掺杂具有相同数量杂质原子的单分散 QD 胶体的合成,而这一挑战的实现将能够实现先进的 QD 器件,例如依赖于杂质态(即未配对自旋的数量、杂质能级的能量和宽度)精确调谐的光学/电控制磁性存储器和带隙内晶体管以及太阳能电池。迄今为止报道的唯一方法依赖于使用有机金属前体进行 QD 种晶,而这些前体本质上不稳定且容易受到化学或环境降解的影响,这阻止了该方法充分发挥其潜力,并且使得该方法不适合水合成途径。在这里,我们通过展示一种掺杂策略来克服这些问题,该策略将两个传统上正交的纳米结构材料系统(即 QD 和由通过稳定的金属-金属键结合在一起的“魔术数”原子组成的金属量子团簇)联系起来。具体来说,我们使用由四个铜原子(Cu)组成的团簇,用 d-青霉胺进行封端,在室温下在水中引发 CdS QD 的生长。通过电喷雾电离质谱、X 射线荧光和电感耦合等离子体质谱以及光学光谱和透射电子显微镜测量进行的元素分析表明,在整个集合体中,每个 Cu:CdS QD 都包含来自一个 Cu 团簇的四个 Cu 原子,该 Cu 团簇充当掺杂杂质的“量子化”源。