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氮气场离子源(GFIS)聚焦离子束(FIB)二次电子成像:初步观察。

Nitrogen Gas Field Ion Source (GFIS) Focused Ion Beam (FIB) Secondary Electron Imaging: A First Look.

作者信息

Schmidt Marek E, Yasaka Anto, Akabori Masashi, Mizuta Hiroshi

机构信息

1School of Materials Science,Japan Advanced Institute of Science and Technology,1-1 Asahidai,Nomi,923-1292,Japan.

出版信息

Microsc Microanal. 2017 Aug;23(4):758-768. doi: 10.1017/S1431927617000502. Epub 2017 May 10.

DOI:10.1017/S1431927617000502
PMID:28487005
Abstract

The recent technological advance of the gas field ion source (GFIS) and its successful integration into systems has renewed the interest in the focused ion beam (FIB) technology. Due to the atomically small source size and the use of light ions, the limitations of the liquid metal ion source are solved as device dimensions are pushed further towards the single-digit nanometer size. Helium and neon ions are the most widely used, but a large portfolio of available ion species is desirable, to allow a wide range of applications. Among argon and hydrogen, $${\rm N}{2}^{{\plus}} $$ ions offer unique characteristics due to their covalent bond and their use as dopant for various carbon-based materials including diamond. Here, we provide a first look at the $${\rm N}{2}^{{\plus}} $$ GFIS-FIB enabled imaging of a large selection of microscopic structures, including gold on carbon test specimen, thin metal films on insulator and nanostructured carbon-based devices, which are among the most actively researched materials in the field of nanoelectronics. The results are compared with images acquired by He+ ions, and we show that $${\rm N}_{2}^{{\plus}} $$ GFIS-FIB can offer improved material contrast even at very low imaging dose and is more sensitive to the surface roughness.

摘要

气体场离子源(GFIS)最近的技术进步及其成功集成到系统中,重新引发了人们对聚焦离子束(FIB)技术的兴趣。由于源尺寸在原子尺度上很小且使用轻离子,随着器件尺寸进一步向个位数纳米尺寸推进,液态金属离子源的局限性得以解决。氦离子和氖离子是最广泛使用的,但需要大量可用的离子种类,以实现广泛的应用。在氩离子和氢离子中,N₂⁺离子因其共价键以及作为包括金刚石在内的各种碳基材料的掺杂剂而具有独特特性。在此,我们首次展示了利用N₂⁺气体场离子源聚焦离子束对多种微观结构进行成像,包括碳上金测试样品、绝缘体上的金属薄膜以及纳米结构的碳基器件,这些都是纳米电子学领域中研究最为活跃的材料。将结果与用He⁺离子获取的图像进行比较,我们表明即使在非常低的成像剂量下,N₂⁺气体场离子源聚焦离子束也能提供更好的材料对比度,并且对表面粗糙度更敏感。

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