通过聚苯乙烯辅助生长制备和应用氧化铟锡纳米线网络。
Fabrication and application of indium-tin-oxide nanowire networks by polystyrene-assisted growth.
机构信息
Key Laboratory of Physical Electronics and Devices for Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics & Information Technology, Xi'an Jiaotong University, Xi'an, Shaanxi, P.R. China.
Solid-State Lighting Engineering Research Center, Xi'an Jiaotong University, Xi'an, Shaanxi, P.R. China.
出版信息
Sci Rep. 2017 May 9;7(1):1600. doi: 10.1038/s41598-017-01385-0.
The fabrication and application of polystyrene (PS)-assisted ITO nanowire (NW) networks are reported. The ITO-NW networks are fabricated by means of electron-beam deposition via PS. This method has the advantages of low-temperature (~300 °C), low-cost, facile and efficient operation. The growth mechanism of PS-assisted ITO NWs was analyzed in detail, and the morphology of which could be regulated by the size of PS. X-ray diffraction and high-resolution transmission electron microscope show that the ITO NWs are close to an integral cubic lattice. The transmittance of ITO-NW networks layer is above 90% after 400 nm and the sheet resistance is ~200 Ω/□. When they applied on vertical blue and green LEDs, the light output power all has been improved ~30%. And, the resistive switching behaviors of ITO-NWs were measured and analyzed in Ag/ITO-NW networks/Al capacitor. The application of ITO-NW networks on special morphological devices was discussed. The PS-assisted ITO-NW networks show a strong researching and application value.
报道了聚苯乙烯（PS）辅助氧化铟锡（ITO）纳米线（NW）网络的制备和应用。通过 PS 辅助的电子束沉积方法制备了 ITO-NW 网络。该方法具有低温（~300°C）、低成本、操作简单高效等优点。详细分析了 PS 辅助 ITO NW 的生长机制，通过 PS 的尺寸可以调节其形态。X 射线衍射和高分辨率透射电子显微镜表明，ITO NW 接近于完整的立方晶格。ITO-NW 网络层的透光率在 400nm 后超过 90%，方阻约为 200Ω/□。当它们应用于垂直的蓝色和绿色 LED 时，光输出功率都提高了约 30%。并且，在 Ag/ITO-NW 网络/Al 电容器中测量和分析了 ITO-NWs 的电阻开关行为。讨论了 ITO-NW 网络在特殊形态器件上的应用。PS 辅助的 ITO-NW 网络具有很强的研究和应用价值。
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