Shi Yuanyuan, Zhou Qi, Zhang Anbang, Zhu Liyang, Shi Yu, Chen Wanjun, Li Zhaoji, Zhang Bo
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, China.
Nanoscale Res Lett. 2017 Dec;12(1):342. doi: 10.1186/s11671-017-2111-z. Epub 2017 May 10.
Conductance method was employed to study the physics of traps (e.g., interface and bulk traps) in the AlO/GaN MOS devices. By featuring only one single peak in the parallel conductance (G /ω) characteristics in the deep depletion region, one single-level bulk trap (E -0.53 eV) uniformly distributed in GaN buffer was identified. While in the subthreshold region, the interface traps with continuous energy of E -0.40.57 eV and density of 0.61.6 × 10 cm were extracted from the commonly observed multiple G /ω peaks. This methodology can be used to investigate the traps in GaN buffer and facilitates making the distinction between bulk and interface traps.
采用电导法研究了AlO/GaN MOS器件中的陷阱物理（如界面陷阱和体陷阱）。通过在深耗尽区的并联电导（G /ω）特性中仅呈现一个单峰，确定了一个均匀分布在GaN缓冲层中的单能级体陷阱（E -0.53 eV）。而在亚阈值区，从常见的多个G /ω峰中提取出能量连续为E -0.40.57 eV、密度为0.61.6×10 cm的界面陷阱。该方法可用于研究GaN缓冲层中的陷阱，并有助于区分体陷阱和界面陷阱。
