National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan.
Chemical Materials Evaluation and Research Base (CEREBA), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8561, Japan.
Sci Adv. 2017 May 10;3(5):e1603282. doi: 10.1126/sciadv.1603282. eCollection 2017 May.
The design of organic compounds with nearly no gap between the first excited singlet (S) and triplet (T) states has been demonstrated to result in an efficient spin-flip transition from the T to S state, that is, reverse intersystem crossing (RISC), and facilitate light emission as thermally activated delayed fluorescence (TADF). However, many TADF molecules have shown that a relatively appreciable energy difference between the S and T states (~0.2 eV) could also result in a high RISC rate. We revealed from a comprehensive study of optical properties of TADF molecules that the formation of delocalized states is the key to efficient RISC and identified a chemical template for these materials. In addition, simple structural confinement further enhances RISC by suppressing structural relaxation in the triplet states. Our findings aid in designing advanced organic molecules with a high rate of RISC and, thus, achieving the maximum theoretical electroluminescence efficiency in organic light-emitting diodes.
设计近乎没有单重态(S)和三重态(T)能级间隙的有机化合物,已被证明可以有效地实现从 T 态到 S 态的自旋翻转跃迁,即反向系间窜越(RISC),并促进热激活延迟荧光(TADF)的发光。然而,许多 TADF 分子表明,S 和 T 态之间存在相当大的能量差异(约 0.2eV)也可能导致高 RISC 速率。我们通过对 TADF 分子光学性质的综合研究揭示,离域态的形成是高效 RISC 的关键,并确定了这些材料的化学模板。此外,简单的结构限制通过抑制三重态中的结构弛豫进一步增强了 RISC。我们的发现有助于设计具有高 RISC 速率的先进有机分子,从而在有机发光二极管中实现最大的理论电致发光效率。