Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology , Wuhan 430074, China.
ACS Appl Mater Interfaces. 2017 Jun 14;9(23):20231-20238. doi: 10.1021/acsami.7b04662. Epub 2017 Jun 2.
Quantum dot (QD) light-emitting diodes (QLEDs) with an inverted architecture suffer from charge-injection imbalance and severe QD charging, which degrade device performance. Blocking excess electron injection into QDs is crucial for efficient inverted QLEDs. It is observed that polyethylenimine (PEI) has two opposite effects on electron injection: one is blocking electron injection by its intrinsic insulativity and the other one is promoting electron injection by reducing the work function of ZnO/PEI. In this work, the insulating nature of PEI has been dominantly utilized to reduce electron injection and the charge-injection balance is realized when PEI becomes thicker and blocks more excess electrons. Furthermore, PEI contributes to QD charging suppression and results in a smoother surface morphology than that of ZnO nanoparticles, which is beneficial for leakage current reduction and QD deposition. As a result, the optimized QLED with 15 nm PEI shows a 2.5 times improved efficiency compared to that of the QLED without PEI. Also, the QLED possesses the maximum external quantum efficiency and current efficiency of 16.5% and 18.8 cd/A, respectively, accompanied with a low efficiency roll-off of 15% at 1000 cd/m, which is comparable to that of the reported inverted red QLED with the highest efficiency.
量子点(QD)发光二极管(QLED)具有倒置结构,存在电荷注入失衡和严重的 QD 充电问题,这会降低器件性能。阻止过量电子注入 QD 对于高效的倒置 QLED 至关重要。研究发现,聚乙烯亚胺(PEI)对电子注入有两种相反的作用:一种是通过其固有绝缘性阻止电子注入,另一种是通过降低 ZnO/PEI 的功函数促进电子注入。在这项工作中,主要利用 PEI 的绝缘性质来减少电子注入,并且当 PEI 变厚并阻挡更多的过量电子时,实现了电荷注入平衡。此外,PEI 有助于抑制 QD 充电,并导致比 ZnO 纳米粒子更平滑的表面形态,这有利于降低漏电流和 QD 沉积。因此,具有 15nmPEI 的优化 QLED 的效率比没有 PEI 的 QLED 提高了 2.5 倍。此外,该 QLED 具有 16.5%的最大外量子效率和 18.8cd/A 的最大电流效率,并且在 1000cd/m 时效率滚降仅为 15%,与报道的具有最高效率的倒置红色 QLED 相当。