School of Electronics and Information Technology, Sun Yat-sen University , Guangzhou 510275, People's Republic of China.
State Key Laboratory for Optoelectronics Materials and Technology, Sun Yat-sen University , Guangzhou 510275, People's Republic of China.
ACS Appl Mater Interfaces. 2017 Jun 7;9(22):18836-18844. doi: 10.1021/acsami.7b04199. Epub 2017 May 30.
Epitaxial two-dimensional GaTe nanosheets on ZnO nanowires were routinely prepared via a two-step chemical vapor deposition procedure. The epitaxial relationship and growth mechanism of the GaTe/ZnO core/shell structures were explored and attributed to a layer-overlayer model. The hybrid structures increased the surface area and the favorable p-n heterojunction enhanced the charge separation for photoelectrochemical performance in water splitting. The above synergistic effects boosted the photocurrent density from -0.3 mA cm for the pristine ZnO nanowires to -2.5 mA cm for the core/shell GaTe/ZnO nanowires at -0.39 V vs RHE under the visible light irradiation. This highlights the promise for utilization of GaTe nanosheet/ZnO nanowires as efficient photoelectrocatalyst for water splitting.
通过两步化学气相沉积法，常规制备了在 ZnO 纳米线上的外延二维 GaTe 纳米片。GaTe/ZnO 核/壳结构的外延关系和生长机制被探索并归因于层叠模型。该混合结构增加了表面积，有利的 p-n 异质结增强了光电化学析水性能中的电荷分离。这些协同效应将原始 ZnO 纳米线的光电流密度从-0.3 mA cm 提高到了核/壳 GaTe/ZnO 纳米线的-2.5 mA cm，在可见光照射下相对于 RHE 的偏置电压为-0.39 V。这突出了 GaTe 纳米片/ZnO 纳米线作为高效光电催化剂用于水分解的应用前景。
