Kara R, Mentar L, Azizi A
Laboratoire de Chimie, Ingénierie Moléculaire et Nanostructures, Faculté des Sciences, Université Ferhat Abbas-Sétif 1 19000 Sétif Algeria
Faculté des Sciences et de la Technologie, Université Abbés Laghrour-Khenchela 40000 Khenchela Algeria.
RSC Adv. 2020 Nov 6;10(66):40467-40479. doi: 10.1039/d0ra06541b. eCollection 2020 Nov 2.
Mg-doped ZnO (MZO) thin films were successfully fabricated on fluorine-doped tin-oxide (FTO)-coated glass substrates by an electrochemical deposition method using aqueous electrolytes of 80 mM Zn(NO) with different concentrations of Mg(NO). The effects of Mg doping concentration on the electronic, microstructural, morphological, optical and electrical properties of the prepared films were investigated. The results of the Mott-Schottky (M-S) analysis revealed that the charge carrier density of n-type MZO films increases considerably when increasing the amount of Mg. As Mg concentration increased the Fermi level energy was also found to be increased by inclusion of Mg doping, which was confirmed by negative shifting of the flat band potential. XRD analysis showed that both undoped and Mg-doped ZnO thin films have a polycrystalline nature and hexagonal wurtzite structure with preferential orientation along the (002) axis. It is evident that the intensity of the (002) peak decreased with increasing Mg concentration. From scanning electron microscopy (SEM) analysis, it was found that when the amount of Mg concentration was increased in the solution, a decrease in the size of the grains was observed. The optical transmittance was found to be very high (∼85%) in the visible region of the solar spectrum. When the Mg content in the ZnO system was increased, a blue shifting of the absorption edge of the films was observed. The result of - measurements showed that the Mg doping was found to lead to an enhancement of the electrical properties of MZO thin films and the design of high-performance transparent conductive oxide (TCO) material.
采用电化学沉积法，以含不同浓度Mg(NO₃)₂的80 mM Zn(NO₃)₂水溶液为电解质，在氟掺杂氧化锡（FTO）涂层玻璃基板上成功制备了Mg掺杂ZnO（MZO）薄膜。研究了Mg掺杂浓度对所制备薄膜的电学、微观结构、形态、光学和电学性能的影响。莫特-肖特基（M-S）分析结果表明，随着Mg含量的增加，n型MZO薄膜的载流子密度显著增加。随着Mg浓度的增加，还发现通过Mg掺杂，费米能级能量增加，这通过平带电位的负移得到证实。XRD分析表明，未掺杂和Mg掺杂的ZnO薄膜均具有多晶性质和六方纤锌矿结构，且沿（002）轴择优取向。显然，（002）峰的强度随着Mg浓度的增加而降低。通过扫描电子显微镜（SEM）分析发现，当溶液中Mg浓度增加时，观察到晶粒尺寸减小。在太阳光谱的可见光区域，发现光透射率非常高（约85%）。当ZnO体系中的Mg含量增加时，观察到薄膜吸收边的蓝移。测量结果表明，Mg掺杂导致MZO薄膜的电学性能增强，以及高性能透明导电氧化物（TCO）材料的设计。
