Ryu Han-Youl
Department of Physics, Inha University, Incheon, 402-751, South Korea.
Nanoscale Res Lett. 2017 Dec;12(1):366. doi: 10.1186/s11671-017-2141-6. Epub 2017 May 19.
GaN-based blue laser diodes (LDs) may exhibit anomalous temperature characteristics such as a very high characteristic temperature (T ) or even negative T . In this work, temperature-dependent characteristics of GaN-based blue LDs with InGaN double quantum well (QW) structures were investigated using numerical simulations. The temperature-dependent threshold current is found to become increasingly anomalous as the thickness or doping concentration of the barrier layer between QWs increases. For a properly chosen barrier thickness and doping concentration, very high T of >10,000 K can be obtained. The anomalous temperature characteristics of these InGaN blue LDs are attributed to the increase of gain at the n-side QW with increasing temperature because of the thermally enhanced hole transport from the p-side to the n-side QW.
基于氮化镓的蓝光激光二极管（LDs）可能表现出异常的温度特性，例如非常高的特征温度（T），甚至是负的T。在这项工作中，使用数值模拟研究了具有氮化铟镓双量子阱（QW）结构的基于氮化镓的蓝光LDs的温度相关特性。发现随着量子阱之间势垒层的厚度或掺杂浓度增加，与温度相关的阈值电流变得越来越异常。对于适当选择的势垒厚度和掺杂浓度，可以获得大于10,000 K的非常高的T。这些氮化铟镓蓝光LDs的异常温度特性归因于随着温度升高，由于从p侧到n侧量子阱的热增强空穴传输，n侧量子阱处的增益增加。
