通过对InGaN/GaN量子阱有源区进行界面工程实现具有低阈值电流密度的绿色激光二极管。

Green laser diodes with low threshold current density via interface engineering of InGaN/GaN quantum well active region.

作者信息

Tian Aiqin, Liu Jianping, Zhang Liqun, Li ZengCheng, Ikeda Masao, Zhang Shuming, Li Deyao, Wen Pengyan, Zhang Feng, Cheng Yang, Fan Xiaowang, Yang Hui

出版信息

Opt Express. 2017 Jan 9;25(1):415-421. doi: 10.1364/OE.25.000415.

DOI:10.1364/OE.25.000415

PMID:28085835

Abstract

By observing the morphology evolution of green InGaN/GaN quantum well (QW) and studying the catholuminescence (CL) property, we investigate indium-segregation-related defects that are formed at green InGaN/GaN QW interfaces. Meanwhile, we also propose the approach and suggest the mechanism to remove them for green InGaN/GaN QW grown on both GaN templates and free-standing GaN substrates. By engineering the interface of green InGaN/GaN QWs, we have achieved green laser diode (LD) structure with low threshold current density of 1.85 kA cm. The output power of the green LD is 58 mW at a current density of 6 kA cm under continuous-wave operation at room temperature.

摘要

通过观察绿色InGaN/GaN量子阱（QW）的形貌演变并研究阴极发光（CL）特性，我们研究了在绿色InGaN/GaN QW界面处形成的与铟偏析相关的缺陷。同时，我们还提出了去除在GaN模板和自支撑GaN衬底上生长的绿色InGaN/GaN QW中这些缺陷的方法并给出了机制。通过对绿色InGaN/GaN QW的界面进行工程设计，我们实现了阈值电流密度低至1.85 kA/cm²的绿色激光二极管（LD）结构。在室温连续波工作条件下，当电流密度为6 kA/cm²时，绿色LD的输出功率为58 mW。