Tian Aiqin, Liu Jianping, Zhang Liqun, Li ZengCheng, Ikeda Masao, Zhang Shuming, Li Deyao, Wen Pengyan, Zhang Feng, Cheng Yang, Fan Xiaowang, Yang Hui
Opt Express. 2017 Jan 9;25(1):415-421. doi: 10.1364/OE.25.000415.
By observing the morphology evolution of green InGaN/GaN quantum well (QW) and studying the catholuminescence (CL) property, we investigate indium-segregation-related defects that are formed at green InGaN/GaN QW interfaces. Meanwhile, we also propose the approach and suggest the mechanism to remove them for green InGaN/GaN QW grown on both GaN templates and free-standing GaN substrates. By engineering the interface of green InGaN/GaN QWs, we have achieved green laser diode (LD) structure with low threshold current density of 1.85 kA cm. The output power of the green LD is 58 mW at a current density of 6 kA cm under continuous-wave operation at room temperature.
通过观察绿色InGaN/GaN量子阱（QW）的形貌演变并研究阴极发光（CL）特性，我们研究了在绿色InGaN/GaN QW界面处形成的与铟偏析相关的缺陷。同时，我们还提出了去除在GaN模板和自支撑GaN衬底上生长的绿色InGaN/GaN QW中这些缺陷的方法并给出了机制。通过对绿色InGaN/GaN QW的界面进行工程设计，我们实现了阈值电流密度低至1.85 kA/cm²的绿色激光二极管（LD）结构。在室温连续波工作条件下，当电流密度为6 kA/cm²时，绿色LD的输出功率为58 mW。
