Beijing Key Laboratory of Photoelectronic/Electrophotonic Conversion Materials, Key Laboratory of Cluster Science of Ministry of Education, School of Chemistry and Chemical Engineering, Beijing Institute of Technology , Beijing 100081, China.
Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology , Guangzhou 510641, China.
ACS Appl Mater Interfaces. 2017 Jun 14;9(23):19998-20009. doi: 10.1021/acsami.7b03771. Epub 2017 Jun 1.
A pair of linear tetrafluorinated small molecular donors, named as ThIDTTh4F and ThIDTSe4F, which are with tetrathienyl-substituted IDT as electron-rich central core, electron-deficient difluorobenzothiadiazole as acceptor units, and donor end-capping groups, but having differences in the π-bridge (thiophene and selenophene), were successfully synthesized and evaluated as donor materials in organic solar cells. Such π-bridge and core units in these small molecules play a decisive role in the formation of the nanoscale separation of the blend films, which were systematically investigated through absorption spectra, grazing incidence X-ray diffraction pattern, transmission electron microscopy images, resonant soft X-ray scattering profiles, and charge mobility measurement. The ThIDTSe4F (with selenophene π-bridge)-based device exhibited superior performance than devices based on ThIDTh4F (with thiophene π-bridge) after post annealing treatment owing to optimized film morphology and improved charge transport. Power conversion efficiency of 7.31% and fill factor of ∼0.70 were obtained by using a blend of ThIDTSe4F and PCBM with thermal annealing and solvent vapor annealing treatments, which is the highest PCE from aromatic side-chain substituted IDT-based small molecular solar cells. The scope of this study is to reveal the structure-property relationship of the aromatic side-chain substituted IDT-based donor materials as a function of π-bridge and the post annealing conditions.
一对线性四氟化小分子给体,分别命名为 ThIDTTh4F 和 ThIDTSe4F,它们以具有四噻吩取代基的 IDT 作为富电子中心核,二氟苯并噻二唑作为受电子单元,以及供电子端基封端基团,但其π桥(噻吩和硒吩)不同,成功合成并评估为有机太阳能电池中的给体材料。这些小分子中的π桥和核心单元在共混膜的纳米尺度分离形成中起着决定性作用,通过吸收光谱、掠入射 X 射线衍射图、透射电子显微镜图像、共振软 X 射线散射谱和电荷迁移率测量对其进行了系统研究。由于优化的薄膜形态和改善的电荷输运,经过后退火处理后,基于 ThIDTSe4F(具有硒吩π桥)的器件表现出优于基于 ThIDTh4F(具有噻吩π桥)的器件的优异性能。通过使用热退火和溶剂蒸气退火处理的 ThIDTSe4F 和 PCBM 的共混物,获得了 7.31%的功率转换效率和约 0.70 的填充因子,这是来自芳族侧链取代的 IDT 基小分子太阳能电池的最高 PCE。本研究的目的是揭示芳族侧链取代的 IDT 基给体材料的结构-性能关系,作为π桥和后退火条件的函数。