Department of Electronic and Electrical Engineering, University College London , London WC1E 7JE, United Kingdom.
Department of Physics, University of Warwick , Coventry CV4 7AL, United Kingdom.
Nano Lett. 2017 Jun 14;17(6):3629-3633. doi: 10.1021/acs.nanolett.7b00803. Epub 2017 Jun 1.
In this Letter, we demonstrate that a significant improvement of optical performance of InAs nanowires can be achieved by capping the core InAs nanowires with a thin InP shell, which successfully passivates the surface states reducing the rate of nonradiative recombination. The improvements have been confirmed by detailed photoluminescence measurements, which showed up to a 10-fold increase in the intensity of room-temperature photoluminescence from the capped InAs/InP nanowires compared to the sample with core-only InAs nanowires. Moreover, the nanowires exhibit a high stability of total photoluminescence emission strength across temperature range from 10 to 300 K as a result of strong quantum confinement. These findings could be the key to successful implementation of InAs nanowires into optoelectronic devices.
在这封信件中，我们证明了通过在核心 InAs 纳米线外覆盖一层薄薄的 InP 壳，可以显著提高 InAs 纳米线的光学性能，从而成功钝化表面态，降低非辐射复合速率。详细的光致发光测量证实了这一点，与仅含有核心 InAs 纳米线的样品相比，覆盖有 InAs/InP 纳米线的样品在室温下的光致发光强度提高了 10 倍。此外，由于强量子限制，纳米线在 10 到 300 K 的温度范围内表现出总光致发光发射强度的高稳定性。这些发现可能是成功将 InAs 纳米线应用于光电器件的关键。
