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通过在铁磁层中引入亚表面层的方法制备大带隙磁拓扑异质结。

Large-Gap Magnetic Topological Heterostructure Formed by Subsurface Incorporation of a Ferromagnetic Layer.

机构信息

Department of Physics, Tokyo Institute of Technology , Tokyo 152-8551, Japan.

Institute of Strength Physics and Materials Science , Tomsk 634055, Russia.

出版信息

Nano Lett. 2017 Jun 14;17(6):3493-3500. doi: 10.1021/acs.nanolett.7b00560. Epub 2017 Jun 5.

DOI:10.1021/acs.nanolett.7b00560
PMID:28545300
Abstract

Inducing magnetism into topological insulators is intriguing for utilizing exotic phenomena such as the quantum anomalous Hall effect (QAHE) for technological applications. While most studies have focused on doping magnetic impurities to open a gap at the surface-state Dirac point, many undesirable effects have been reported to appear in some cases that makes it difficult to determine whether the gap opening is due to the time-reversal symmetry breaking or not. Furthermore, the realization of the QAHE has been limited to low temperatures. Here we have succeeded in generating a massive Dirac cone in a MnBiSe/BiSe heterostructure, which was fabricated by self-assembling a MnBiSe layer on top of the BiSe surface as a result of the codeposition of Mn and Se. Our experimental results, supported by relativistic ab initio calculations, demonstrate that the fabricated MnBiSe/BiSe heterostructure shows ferromagnetism up to room temperature and a clear Dirac cone gap opening of ∼100 meV without any other significant changes in the rest of the band structure. It can be considered as a result of the direct interaction of the surface Dirac cone and the magnetic layer rather than a magnetic proximity effect. This spontaneously formed self-assembled heterostructure with a massive Dirac spectrum, characterized by a nontrivial Chern number C = -1, has a potential to realize the QAHE at significantly higher temperatures than reported up to now and can serve as a platform for developing future "topotronics" devices.

摘要

在拓扑绝缘体中诱导磁性对于利用奇异现象,如量子反常霍尔效应(QAHE),用于技术应用是很有吸引力的。虽然大多数研究都集中在掺杂磁性杂质以在表面态狄拉克点打开能隙,但在某些情况下,已经报道了许多不希望出现的效应,这使得很难确定能隙的打开是否是由于时间反转对称性破缺引起的。此外,QAHE 的实现仅限于低温。在这里,我们成功地在 MnBiSe/BiSe 异质结构中产生了一个巨大的狄拉克锥,这是通过 Mn 和 Se 的共沉积在 BiSe 表面上自组装 MnBiSe 层而实现的。我们的实验结果得到了相对论从头算的支持,表明所制备的 MnBiSe/BiSe 异质结构表现出室温铁磁性和明显的狄拉克锥能隙打开约 100meV,而其余能带结构没有任何其他显著变化。这可以被认为是表面狄拉克锥和磁性层之间的直接相互作用的结果,而不是磁近邻效应。这种具有大量狄拉克谱的自发形成的自组装异质结构,具有非平凡的陈数 C = -1,有望在比目前报道的更高的温度下实现 QAHE,并可以作为开发未来“拓扑电子学”器件的平台。

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