London Centre for Nanotechnology, University College London , London WC1H 0AH, U.K.
Department of Physics, ETH Zürich , Zürich CH-8093, Switzerland.
ACS Appl Mater Interfaces. 2017 Jun 21;9(24):20686-20695. doi: 10.1021/acsami.7b01449. Epub 2017 Jun 9.
While organic semiconductors provide tantalizing possibilities for low-cost, light-weight, flexible electronic devices, their current use in transistors-the fundamental building block-is rather limited as their speed and reliability are not competitive with those of their inorganic counterparts and are simply too poor for many practical applications. Through self-assembly, highly ordered nanostructures can be prepared that have more competitive transport characteristics; however, no simple, scalable method has been discovered that can produce devices on the basis of such nanostructures. Here, we show how transistors of self-assembled molecular nanowires can be fabricated using a scalable, gradient sublimation technique, which have dramatically improved characteristics compared to those of their thin-film counterparts, both in terms of performance and stability. Nanowire devices based on copper phthalocyanine have been fabricated with threshold voltages as low as -2.1 V, high on/off ratios of 10, small subthreshold swings of 0.9 V/decade, and mobilities of 0.6 cm/V s, and lower trap energies as deduced from temperature-dependent properties, in line with leading organic semiconductors involving more complex fabrication. High-performance transistors manufactured using our scalable deposition technique, compatible with flexible substrates, could enable integrated all-organic chips implementing conventional as well as neuromorphic computation and combining sensors, logic, data storage, drivers, and displays.
虽然有机半导体为低成本、轻量级、灵活的电子设备提供了诱人的可能性，但它们在晶体管（基本构建块）中的当前应用受到限制，因为它们的速度和可靠性与无机同类产品相比没有竞争力，而且对于许多实际应用来说实在太差了。通过自组装，可以制备具有更具竞争力的传输特性的高度有序的纳米结构；然而，尚未发现能够基于这种纳米结构生产器件的简单、可扩展的方法。在这里，我们展示了如何使用可扩展的梯度升华技术制造自组装分子纳米线晶体管，与薄膜晶体管相比，它们在性能和稳定性方面都有显著提高。基于铜酞菁的纳米线器件的制造具有低至-2.1 V 的阈值电压、高达 10 的高开/关比、0.9 V/decade 的小亚阈值摆幅和 0.6 cm/V s 的迁移率，以及从温度相关特性推断出的较低的陷阱能，与涉及更复杂制造的领先有机半导体一致。使用我们的可扩展沉积技术制造的高性能晶体管与柔性衬底兼容，可以实现集成的全有机芯片，实现传统的以及神经形态计算，并结合传感器、逻辑、数据存储、驱动器和显示器。
