Gherendi Florin, Dobrin Daniela, Nistor Magdalena
National Institute for Lasers, Plasma and Radiation Physics (INFLPR), P.O. Box MG-36, 077125 Magurele-Bucharest, Romania.
Micromachines (Basel). 2024 Feb 12;15(2):265. doi: 10.3390/mi15020265.
Thin film transistors on paper are increasingly in demand for emerging applications, such as flexible displays and sensors for wearable and disposable devices, making paper a promising substrate for green electronics and the circular economy. ZnO self-assembled thin film transistors on a paper substrate, also using paper as a gate dielectric, were fabricated by pulsed electron beam deposition (PED) at room temperature. These self-assembled ZnO thin film transistor source-channel-drain structures were obtained in a single deposition process using 200 and 300 µm metal wires as obstacles in the path of the ablation plasma. These transistors exhibited a memory effect, with two distinct states, "on" and "off", and with a field-effect mobility of about 25 cm/Vs in both states. For the "on" state, a threshold voltage (V = -1.75 V) and subthreshold swing (S = 1.1 V/decade) were determined, while, in the "off" state, V = +1.8 V and S = 1.34 V/decade were obtained. A 1.6 μA maximum drain current was obtained in the "off" state, and 11.5 μA was obtained in the "on" state of the transistor. Due to ZnO's non-toxicity, such self-assembled transistors are promising as components for flexible, disposable smart labels and other various green paper-based electronics.
纸质薄膜晶体管在诸如柔性显示器以及可穿戴和一次性设备的传感器等新兴应用中的需求日益增长，这使得纸张成为绿色电子和循环经济领域颇具前景的基底。通过室温下的脉冲电子束沉积（PED）工艺，在纸质基底上制备了氧化锌自组装薄膜晶体管，同时将纸张用作栅极电介质。利用200和300微米的金属线作为烧蚀等离子体路径中的障碍物，在单次沉积过程中获得了这些自组装的氧化锌薄膜晶体管源极-沟道-漏极结构。这些晶体管呈现出记忆效应，具有“开”和“关”两种不同状态，且在两种状态下的场效应迁移率约为25厘米²/（伏·秒）。对于“开”状态，确定了阈值电压（V = -1.75伏）和亚阈值摆幅（S = 1.1伏/十倍频程），而在“关”状态下，得到V = +1.8伏和S = 1.34伏/十倍频程。在晶体管的“关”状态下获得了1.6微安的最大漏极电流，在“开”状态下获得了11.5微安。由于氧化锌无毒，这种自组装晶体管有望成为柔性、一次性智能标签及其他各种绿色纸质电子产品的组件。
