Liu Yuchun, Xu Ling, Zhao Chen, Shao Ming, Hu Bin
Wu Han National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wu Han 430074, China.
Phys Chem Chem Phys. 2017 Jun 7;19(22):14793-14800. doi: 10.1039/c7cp01736g.
Fullerene (C) is an important n-type organic semiconductor with high electron mobility and low thermal conductivity. In this work, we report the experimental results on the tunable Seebeck effect of C hybrid thin-film devices by adopting different oxide layers. After inserting n-type high-dielectric constant titanium oxide (TiO) and zinc oxide (ZnO) layers, we observed a significantly enhanced n-type Seebeck effect in oxide/C hybrid devices with Seebeck coefficients of -5.8 mV K for TiO/C and -2.08 mV K for ZnO/C devices at 100 °C, compared with the value of -400 μV K for the pristine C device. However, when a p-type nickel oxide (NiO) layer is inserted, the C hybrid devices show a p-type to n-type Seebeck effect transition when the temperature increases. The remarkable Seebeck effect and change in Seebeck coefficient in different oxide/C hybrid devices can be attributed to two reasons: the temperature-dependent surface polarization difference and thermally-dependent interface dipoles. Firstly, the surface polarization difference due to temperature-dependent electron-phonon coupling can be enhanced by inserting an oxide layer and functions as an additional driving force for the Seebeck effect development. Secondly, thermally-dependent interface dipoles formed at the electrode/oxide interface play an important role in modifying the density of interface states and affecting the charge diffusion in hybrid devices. The surface polarization difference and interface dipoles function in the same direction in hybrid devices with TiO and ZnO dielectric layers, leading to enhanced n-type Seebeck effect, while the surface polarization difference and interface dipoles generate the opposite impact on electron diffusion in ITO/NiO/C/Al, leading to a p-type to n-type transition in the Seebeck effect. Therefore, inserting different oxide layers could effectively modulate the Seebeck effect of C-based hybrid devices through the surface polarization difference and thermally-dependent interface dipoles, which represents an effective approach to tune the vertical Seebeck effect in organic functional devices.
富勒烯(C)是一种重要的n型有机半导体,具有高电子迁移率和低导热率。在本工作中,我们报道了通过采用不同的氧化物层对C混合薄膜器件的可调塞贝克效应的实验结果。插入n型高介电常数的氧化钛(TiO)和氧化锌(ZnO)层后,我们观察到在氧化物/C混合器件中n型塞贝克效应显著增强,在100°C时,TiO/C器件的塞贝克系数为-5.8 mV K,ZnO/C器件的塞贝克系数为-2.08 mV K,相比之下,原始C器件的值为-400 μV K。然而,当插入p型氧化镍(NiO)层时,C混合器件在温度升高时显示出从p型到n型的塞贝克效应转变。不同氧化物/C混合器件中显著的塞贝克效应和塞贝克系数的变化可归因于两个原因:与温度相关的表面极化差异和与热相关的界面偶极子。首先,通过插入氧化物层可以增强由于与温度相关的电子-声子耦合引起的表面极化差异,并作为塞贝克效应发展的额外驱动力。其次,在电极/氧化物界面形成的与热相关的界面偶极子在改变界面态密度和影响混合器件中的电荷扩散方面起着重要作用。在具有TiO和ZnO介电层的混合器件中,表面极化差异和界面偶极子在同一方向起作用,导致n型塞贝克效应增强,而在ITO/NiO/C/Al中,表面极化差异和界面偶极子对电子扩散产生相反的影响,导致塞贝克效应从p型转变为n型。因此,插入不同的氧化物层可以通过表面极化差异和与热相关的界面偶极子有效地调节基于C的混合器件的塞贝克效应,这代表了一种调节有机功能器件中垂直塞贝克效应的有效方法。