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通过简便方法合成基于烷基硒吩的梯型单体,用于高性能薄膜晶体管应用。

Alkylated Selenophene-Based Ladder-Type Monomers via a Facile Route for High-Performance Thin-Film Transistor Applications.

机构信息

Department of Materials Science and Engineering, Monash University , Clayton, Victoria 3800, Australia.

CSIRO Manufacturing, Ian Wark Laboratories , Clayton, Victoria 3168, Australia.

出版信息

J Am Chem Soc. 2017 Jun 28;139(25):8552-8561. doi: 10.1021/jacs.7b03099. Epub 2017 Jun 15.

DOI:10.1021/jacs.7b03099
PMID:28548496
Abstract

We report the synthesis of two new selenophene-containing ladder-type monomers, cyclopentadiselenophene (CPDS) and indacenodiselenophene (IDSe), via a 2-fold and 4-fold Pd-catalyzed coupling with a 1,1-diborylmethane derivative. Copolymers with benzothiadiazole were prepared in high yield by Suzuki polymerization to afford materials which exhibited excellent solubility in a range of nonchlorinated solvents. The CPDS copolymer exhibited a band gap of just 1.18 eV, which is among the lowest reported for donor-acceptor polymers. Thin-film transistors were fabricated using environmentally benign, nonchlorinated solvents, with the CPDS and IDSe copolymers exhibiting hole mobility up to 0.15 and 6.4 cm V s, respectively. This high performance was achieved without the undesirable peak in mobility often observed at low gate voltages due to parasitic contact resistance.

摘要

我们通过两次和四次钯催化的偶联反应,使用 1,1-二硼甲烷衍生物,合成了两种新型含硒吩的梯形单体:环戊二硒吩(CPDS)和茚并二硒吩(IDSe)。通过 Suzuki 聚合反应制备了具有较高产率的与苯并噻二唑的共聚物,这些材料在一系列非氯化溶剂中表现出优异的溶解性。CPDS 共聚物的带隙仅为 1.18 eV,是报道的供体-受体聚合物中最低的之一。使用环境友好、非氯化的溶剂制备了薄膜晶体管,CPDS 和 IDSe 共聚物的空穴迁移率分别高达 0.15 和 6.4 cm V s。这种高性能是在没有由于寄生接触电阻而在低栅极电压下经常观察到的迁移率峰值的情况下实现的。

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