Centre for Energy Research, Institute of Technical Physics and Materials Science, Nanotechnology Department, 2D NanoFab ERC Research Group, Budapest, 1525, POB 49, Hungary.
Department of Biological Physics, Eötvös University (ELTE), Pázmány Péter sétány 1/A, 1117, Budapest, Hungary.
Sci Rep. 2017 Jun 8;7(1):3035. doi: 10.1038/s41598-017-03332-5.
Patterning graphene into various mesoscopic devices such as nanoribbons, quantum dots, etc. by lithographic techniques has enabled the guiding and manipulation of graphene's Dirac-type charge carriers. Graphene, with well-defined strain patterns, holds promise of similarly rich physics while avoiding the problems created by the hard to control edge configuration of lithographically prepared devices. To engineer the properties of graphene via mechanical deformation, versatile new techniques are needed to pattern strain profiles in a controlled manner. Here we present a process by which strain can be created in substrate supported graphene layers. Our atomic force microscope-based technique opens up new possibilities in tailoring the properties of graphene using mechanical strain.
通过光刻技术将石墨烯图案化制成各种介观器件，如纳米带、量子点等，这使得对石墨烯的狄拉克型电荷载流子进行引导和操控成为可能。具有明确定义的应变图案的石墨烯有望具有同样丰富的物理特性，同时避免了光刻制备器件难以控制的边缘结构所带来的问题。为了通过机械变形来设计石墨烯的性质，需要有灵活的新技术来以可控的方式形成应变轮廓。在这里，我们提出了一种在基底支撑的石墨烯层中产生应变的方法。我们基于原子力显微镜的技术为使用机械应变来调整石墨烯的性质开辟了新的可能性。
