Kim Kris S, Trajanoski Daniel, Ho Kevin, Gilburd Leonid, Maiti Aniket, van der Velden Luuk, de Beer Sissi, Walker Gilbert C
Department of Chemistry, University of Toronto , 80 St. George Street Toronto, Ontario M5S 3H6, Canada.
Department of Physics, Indian Institution of Technology , Kanpur, 208016, India.
J Phys Chem Lett. 2017 Jul 6;8(13):2902-2908. doi: 10.1021/acs.jpclett.7b01048. Epub 2017 Jun 14.
In order to apply the ability of hexagonal boron nitride (hBN) to confine energy in the form of hyperbolic phonon polariton (HPhP) modes in photonic-electronic devices, approaches to finely control and leverage the sensitivity of these propagating waves must be investigated. Here, we show that by surrounding hBN with materials of lower/higher dielectric responses, such as air and silicon, lower/higher surface momenta of HPhPs can be achieved. Furthermore, an alternative method for preparing thin hBN crystals with minimum contamination is presented, which provides opportunities to study the sensitivity of the damping mechanism of HPhPs on adsorbed materials. Infrared scanning near-field optical microscopy (IR-SNOM) results suggest that the reflections at the upper and lower hBN interfaces are primary causes of the damping of HPhPs, and that the damping coefficients of propagating waves are highly sensitive to adjacent layers, suggesting opportunities for sensor applications.
为了在光子电子器件中应用六方氮化硼(hBN)以双曲线声子极化激元(HPhP)模式形式限制能量的能力,必须研究精确控制和利用这些传播波灵敏度的方法。在此,我们表明,通过用具有较低/较高介电响应的材料(如空气和硅)包围hBN,可以实现较低/较高表面动量的HPhP。此外,还提出了一种制备污染最小的薄hBN晶体的替代方法,这为研究HPhP对吸附材料的阻尼机制的灵敏度提供了机会。红外扫描近场光学显微镜(IR-SNOM)结果表明,hBN上下界面处的反射是HPhP阻尼的主要原因,并且传播波的阻尼系数对相邻层高度敏感,这为传感器应用提供了机会。