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通过偏振控制在低损耗富硼六方氮化硼中操纵声子极化激元。

Manipulating phonon polaritons in low loss B enriched hexagonal boron nitride with polarization control.

作者信息

Wang Lu, Chen Runkun, Xue Mengfei, Liu Song, Edgar James H, Chen Jianing

机构信息

The Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing, 100190, China.

出版信息

Nanoscale. 2020 Apr 21;12(15):8188-8193. doi: 10.1039/d0nr01067g. Epub 2020 Apr 7.

Abstract

Hexagonal boron nitride (hBN) supports two types of hyperbolic phonon polaritons (HPPs), whose properties of strong electromagnetic field confinement and low propagation loss have been proposed for various applications in nanophotonics. Conventionally, real-space imaging of HPPs by scattering-type scanning near-field optical microscopy (s-SNOM) with vertical polarization excitation contains both tip and edge launched polariton modes, which leads to hybrid interference fringes. In this work, we symmetrically study the tip and edge excited HPPs in both boron nitride with the natural distribution of boron isotopes (natural hBN) and B isotope-enriched boron nitride (99.2% B hBN). The intrinsic HPPs excited in 99.2% B hBN exhibit a lower damping rate and longer propagation length than that in natural hBN. We experimentally realize a tuning from tip-dominated to edge-dominated excited HPPs by rotating the polarization of incident light. The near-field electric field intensity (NEFI) of edge-excited HPPs E and the angle β (between the hBN edge and the projective direction of the incident electric field on the hBN plane) present a sine function relationship as E∝|sin β| under an s-polarized incident light. The NEFI of edge-excited HPPs in 99.2% B hBN shows a 10% enhancement compared to natural hBN under the same measurement conditions. Our findings demonstrate an effective approach to reducing phonon polariton damping and manipulating phonon polariton excitation in hBN, which are beneficial for developing HPPs-based nanophotonic applications.

摘要

六方氮化硼(hBN)支持两种类型的双曲声子极化激元(HPPs),其强电磁场限制和低传播损耗的特性已被提出用于纳米光子学的各种应用。传统上,通过垂直偏振激发的散射型扫描近场光学显微镜(s-SNOM)对HPPs进行实空间成像时,包含尖端和边缘发射的极化激元模式,这会导致混合干涉条纹。在这项工作中,我们对称地研究了具有天然硼同位素分布的氮化硼(天然hBN)和富含B同位素的氮化硼(99.2% B hBN)中尖端和边缘激发的HPPs。在99.2% B hBN中激发的本征HPPs表现出比天然hBN更低的阻尼率和更长的传播长度。我们通过旋转入射光的偏振,实验实现了从尖端主导到边缘主导的激发HPPs的调谐。在s偏振入射光下,边缘激发的HPPs的近场电场强度(NEFI)E与hBN边缘和入射电场在hBN平面上的投影方向之间的夹角β呈现正弦函数关系,即E∝|sin β|。在相同测量条件下,99.2% B hBN中边缘激发的HPPs的NEFI比天然hBN提高了10%。我们的研究结果展示了一种有效降低hBN中声子极化激元阻尼并操纵声子极化激元激发的方法,这有利于开发基于HPPs的纳米光子学应用。

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