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混合双曲材料/硅波导异质结构中的中红外和近红外光引导

Guided Mid-IR and Near-IR Light within a Hybrid Hyperbolic-Material/Silicon Waveguide Heterostructure.

作者信息

He Mingze, Halimi Sami I, Folland Thomas G, Sunku Sai S, Liu Song, Edgar James H, Basov D N, Weiss Sharon M, Caldwell Joshua D

机构信息

Department of Mechanical Engineering, Vanderbilt University, Nashville, TN, 37212, USA.

Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN, 37212, USA.

出版信息

Adv Mater. 2021 Mar;33(11):e2004305. doi: 10.1002/adma.202004305. Epub 2021 Feb 1.

DOI:10.1002/adma.202004305
PMID:33522035
Abstract

Silicon waveguides have enabled large-scale manipulation and processing of near-infrared optical signals on chip. Yet, expanding the bandwidth of guided waves to other frequencies will further increase the functionality of silicon as a photonics platform. Frequency multiplexing by integrating additional architectures is one approach to the problem, but this is challenging to design and integrate within the existing form factor due to scaling with the free-space wavelength. This paper demonstrates that a hexagonal boron nitride (hBN)/silicon hybrid waveguide can simultaneously enable dual-band operation at both mid-infrared (6.5-7.0 µm) and telecom (1.55 µm) frequencies, respectively. The device is realized via the lithography-free transfer of hBN onto a silicon waveguide, maintaining near-infrared operation. In addition, mid-infrared waveguiding of the hyperbolic phonon polaritons (HPhPs) supported in hBN is induced by the index contrast between the silicon waveguide and the surrounding air underneath the hBN, thereby eliminating the need for deleterious etching of the hyperbolic medium. The behavior of HPhP waveguiding in both straight and curved trajectories is validated within an analytical waveguide theoretical framework. This exemplifies a generalizable approach based on integrating hyperbolic media with silicon photonics for realizing frequency multiplexing in on-chip photonic systems.

摘要

硅波导已实现了片上近红外光信号的大规模操控与处理。然而,将导波带宽扩展到其他频率将进一步提升硅作为光子学平台的功能。通过集成额外架构进行频率复用是解决该问题的一种方法,但由于与自由空间波长成比例缩放,在现有外形尺寸内进行设计和集成具有挑战性。本文证明了一种六方氮化硼(hBN)/硅混合波导能够分别在中红外(6.5 - 7.0微米)和电信(1.55微米)频率上同时实现双波段运行。该器件是通过将hBN无光刻转移到硅波导上实现的,同时保持近红外运行。此外,hBN中支持的双曲线声子极化激元(HPhPs)的中红外波导是由硅波导与hBN下方周围空气之间的折射率对比度诱导产生的,从而无需对双曲线介质进行有害蚀刻。在解析波导理论框架内验证了HPhP在直线和弯曲轨迹中的波导行为。这例证了一种基于将双曲线介质与硅光子学集成以在片上光子系统中实现频率复用的通用方法。

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