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源自取代噻吩基噻唑的空气稳定四配位硼配合物的n沟道有机半导体。

n-Channel Organic Semiconductors Derived from Air-Stable Four-Coordinate Boron Complexes of Substituted Thienylthiazoles.

作者信息

Hecht Reinhard, Kade Juliane, Schmidt David, Nowak-Król Agnieszka

机构信息

Center for Nanosystems Chemistry (CNC) and Bavarian Polymer Institute (BPI), Universität Würzburg, Theodor-Boveri-Weg, 97074, Würzburg, Germany.

Institut für Organische Chemie, Universität Würzburg, Am Hubland, 97074, Würzburg, Germany.

出版信息

Chemistry. 2017 Aug 25;23(48):11620-11628. doi: 10.1002/chem.201701922. Epub 2017 Aug 4.

Abstract

Three acceptor-π-bridge-acceptor (A-π-A) molecules derived from 2-(3-boryl-2-thienyl)thiazole have been synthesized and thoroughly characterized. Incorporation of a B-N unit into thienylthiazole and attachment of suitable acceptor moieties allowed to obtain ambient-stable A-π-A molecules with low-lying LUMO levels. Their potential for applications in organic electronics was tested in vacuum-deposited organic thin film transistors (OTFT). The OTFT device based on boryl-thienylthiazole and 1,1-dicyanomethylene-3-indanone (DCIND) acceptor moieties showed an electron mobility of ≈1.4×10  cm  V  s in air, which is the highest electron mobility reported to date for organoboron small molecules. Conversely, the device employing the malononitrile (MAL) derivative as an active layer did not show any charge transport behavior. As suggested by single crystal X-ray analysis of indandione (IND) and MAL derivatives, the enhanced mobility of IND (and DCIND) in comparison to the MAL molecule can be attributed to the effective two-dimensional π-stacking in the solid state imparted by the acceptor moieties with an extended π-surface.

摘要

已经合成并全面表征了三种源自2-(3-硼基-2-噻吩基)噻唑的受体-π-桥-受体(A-π-A)分子。将B-N单元引入噻吩基噻唑并连接合适的受体部分,使得能够获得具有低LUMO能级且在环境中稳定的A-π-A分子。在真空沉积的有机薄膜晶体管(OTFT)中测试了它们在有机电子学中的应用潜力。基于硼基噻吩基噻唑和1,1-二氰基亚甲基-3-茚满酮(DCIND)受体部分的OTFT器件在空气中显示出约1.4×10  cm  V  s的电子迁移率,这是迄今为止报道的有机硼小分子中最高的电子迁移率。相反,采用丙二腈(MAL)衍生物作为活性层的器件未表现出任何电荷传输行为。正如茚满二酮(IND)和MAL衍生物的单晶X射线分析所表明的,与MAL分子相比,IND(和DCIND)迁移率的提高可归因于具有扩展π表面的受体部分在固态中赋予的有效的二维π堆积。

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