College of Electronic Information and Optical Engineering, Nankai University, The Tianjin Key Laboratory for Optical-Electronics Thin Film Devices and Technology , Tianjin 300071, China.
Department of Microelectronic Science and Engineering, Ningbo University , Zhejiang 315211, China.
ACS Appl Mater Interfaces. 2017 Jul 5;9(26):21909-21920. doi: 10.1021/acsami.7b04392. Epub 2017 Jun 23.
Recently, low temperature solution-processed tin oxide (SnO) as a versatile electron transport layer (ETL) for efficient and robust planar heterojunction (PH) perovskite solar cells (PSCs) has attracted particular attention due to its outstanding properties such as high optical transparency, high electron mobility, and suitable band alignment. However, for most of the reported works, an annealing temperature of 180 °C is generally required. This temperature is reluctantly considered to be a low temperature, especially with respect to the flexible application where 180 °C is still too high for the polyethylene terephthalate flexible substrate to bear. In this contribution, low temperature (about 70 °C) UV/ozone treatment was applied to in situ synthesis of SnO films deposited on the fluorine-doped tin oxide substrate as ETL. This method is a facile photochemical treatment which is simple to operate and can easily eliminate the organic components. Accordingly, PH PSCs with UV-sintered SnO films as ETL were successfully fabricated for the first time. The device exhibited excellent photovoltaic performance as high as 16.21%, which is even higher than the value (11.49%) reported for a counterpart device with solution-processed and high temperature annealed SnO films as ETL. These low temperature solution-processed and UV-sintered SnO films are suitable for the low-cost, large yield solution process on a flexible substrate for optoelectronic devices.
最近，低温溶液处理的氧化锡（SnO）作为一种通用的电子传输层（ETL），因其具有高光学透明度、高电子迁移率和合适的能带排列等优异性能，在高效和稳定的平面异质结（PH）钙钛矿太阳能电池（PSC）中受到特别关注。然而，对于大多数报道的工作，通常需要 180°C 的退火温度。这个温度勉强被认为是低温，特别是在柔性应用方面，180°C 对聚对苯二甲酸乙二醇酯柔性基底来说仍然太高。在本研究中，低温（约 70°C）的 UV/臭氧处理被应用于原位合成沉积在掺氟氧化锡基底上的 SnO 薄膜作为 ETL。这种方法是一种简便的光化学处理，操作简单，可以很容易地去除有机成分。因此，首次成功地制备了具有 UV 固化 SnO 薄膜作为 ETL 的 PH PSC。该器件表现出高达 16.21%的优异光伏性能，甚至高于具有溶液处理和高温退火 SnO 薄膜作为 ETL 的对应器件（11.49%）的报告值。这些低温溶液处理和 UV 固化的 SnO 薄膜适用于低成本、高产率的柔性基底上的溶液处理，用于光电设备。
