Plokhikh Aleksandr V, Falmbigl Matthias, Golovina Iryna S, Akbashev Andrew R, Karateev Igor A, Presnyakov Mikhail Y, Vasiliev Alexander L, Spanier Jonathan E
Department of Materials Science & Engineering, Drexel University, Philadelphia, Pennsylvania, 19104, USA.
Institute of Semiconductor Physics of NAS of Ukraine, Pr. Nauki 41, Kiev, 03028, Ukraine.
Chemphyschem. 2017 Aug 5;18(15):1966-1970. doi: 10.1002/cphc.201700407. Epub 2017 Jun 20.
We report on the growth of polycrystalline BiFeO thin films on SiO /Si(001) and Pt(111) substrates by atomic layer deposition using the precursors ferrocene, triphenyl-bismuth, and ozone. By growing alternating layers of Fe O and Bi O , we employ a superlattice approach and demonstrate an efficient control of the cation stoichiometry. The superlattice decay and the resulting formation of polycrystalline BiFeO films are studied by in situ X-ray diffraction, in situ X-ray photoelectron spectroscopy, and transmission electron microscopy. No intermediate ternary phases are formed and BiFeO crystallization is initiated in the Bi O layers at 450 °C following the diffusion-driven intermixing of the cations. Our study of the BiFeO formation provides an insight into the complex interplay between microstructural evolution, grain growth, and bismuth oxide evaporation, with implications for optimization of ferroelectric properties.
我们报道了使用二茂铁、三苯基铋和臭氧作为前驱体,通过原子层沉积在SiO /Si(001)和Pt(111)衬底上生长多晶BiFeO薄膜的情况。通过生长Fe O和Bi O的交替层,我们采用了超晶格方法,并展示了对阳离子化学计量比的有效控制。通过原位X射线衍射、原位X射线光电子能谱和透射电子显微镜研究了超晶格的衰减以及由此形成的多晶BiFeO薄膜。没有形成中间三元相,并且在450°C时,随着阳离子的扩散驱动混合,BiFeO在Bi O层中开始结晶。我们对BiFeO形成的研究深入了解了微观结构演变、晶粒生长和氧化铋蒸发之间的复杂相互作用,这对铁电性能的优化具有重要意义。