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通过沉积BiO和FeO实现柔性衬底功能化表面的多铁性行为。

Multiferroic behavior of the functionalized surface of a flexible substrate by deposition of Bi O and Fe O.

作者信息

Ramazanov Shikhgasan, Sobola Dinara, Ţălu Ştefan, Orudzev Farid, Arman Ali, Kaspar Pavel, Dallaev Rashid, Ramazanov Guseyn

机构信息

Faculty of Chemistry, Department of Physical and Organic Chemistry, Dagestan State University, Makhachkala, Russia.

Department of Physics, Faculty of Electrical Engineering and Communication, Brno University of Technology, Brno, Czech Republic.

出版信息

Microsc Res Tech. 2022 Apr;85(4):1300-1310. doi: 10.1002/jemt.23996. Epub 2021 Nov 24.

Abstract

Thin films of bismuth and iron oxides were obtained by atomic layer deposition (ALD) on the surface of a flexible substrate poly(4,4'-oxydiphenylene-pyromellitimide) (Kapton) at a temperature of 250°C. The layer thickness was 50 nm. The samples were examined by secondary-ion mass spectrometry, and uniform distribution of elements in the film layer was observed. Surface morphology, electrical polarization, and mechanical properties were investigated by atomic force microscope, piezoelectric force microscopy, and force modulation microscopy. The values of current in the near-surface layer varied in the range of ±80 pA when a potential of 5 V was applied. Chemical analysis was performed by X-ray photoelectron spectroscopy, where the formation of Bi O and Fe O phases, as well as intermediate phases in the Bi-Fe-O system, was observed. Magnetic measurements were carried out by a vibrating sample magnetometer that showed a ferromagnetic response. The low-temperature method of functionalization of the Kapton surface with bismuth and iron oxides will make it possible to adapt the Bi-Fe-O system to flexible electronics.

摘要

通过原子层沉积(ALD)在250°C的温度下,在柔性基底聚(4,4'-氧二亚苯基-均苯四甲酰亚胺)(Kapton)表面获得了铋和铁的氧化物薄膜。层厚度为50纳米。通过二次离子质谱对样品进行了检测,观察到薄膜层中元素的均匀分布。利用原子力显微镜、压电力显微镜和力调制显微镜研究了表面形貌、电极化和机械性能。当施加5V的电势时,近表面层中的电流值在±80 pA范围内变化。通过X射线光电子能谱进行了化学分析,观察到了BiO和FeO相以及Bi-Fe-O系统中的中间相的形成。通过振动样品磁强计进行了磁性测量,结果显示出铁磁响应。用铋和铁的氧化物对Kapton表面进行低温功能化的方法将使Bi-Fe-O系统能够应用于柔性电子学。

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