Nano-Convergence Materials Center, Korea Institute of Ceramic Engineering and Technology, 101, Soho-ro, Jinju-si, Gyeongsangnam-do, 52851, Republic of Korea.
Sci Rep. 2017 Jun 20;7(1):3874. doi: 10.1038/s41598-017-04222-6.
We synthesised a crystalline MoS film from as-sputtered amorphous film by applying an electron beam irradiation (EBI) process. A collimated electron beam (60 mm dia.) with an energy of 1 kV was irradiated for only 1 min to achieve crystallisation without an additional heating process. After the EBI process, we observed a two-dimensional layered structure of MoS about 4 nm thick and with a hexagonal atomic arrangement on the surface. A stoichiometric MoS film was confirmed to grow well on SiO/Si substrates and include partial oxidation of Mo. In our experimental configuration, EBI on an atomically thin MoS layer stimulated the transformation from a thermodynamically unstable amorphous structure to a stable crystalline nature with a nanometer grain size. We employed a Monte Carlo simulation to calculate the penetration depth of electrons into the MoS film and investigated the atomic rearrangement of the amorphous MoS structure.
我们通过电子束辐照（EBI）工艺从非晶态溅射薄膜中合成了结晶 MoS 薄膜。使用能量为 1 kV 的准直电子束（直径 60 mm）辐照仅 1 分钟即可实现结晶，而无需额外的加热过程。在 EBI 处理之后，我们观察到表面具有约 4nm 厚的二维层状 MoS 结构和六方原子排列。证明在 SiO2/Si 衬底上生长的 MoS 薄膜具有良好的化学计量比，并且包含 Mo 的部分氧化。在我们的实验配置中，原子层厚度的 MoS 层上的 EBI 刺激了从热力学不稳定的非晶结构到具有纳米晶粒尺寸的稳定结晶性质的转变。我们采用 Monte Carlo 模拟计算了电子进入 MoS 薄膜的穿透深度，并研究了非晶 MoS 结构的原子重排。
