Tao Junguang, Chai Jianwei, Lu Xin, Wong Lai Mun, Wong Ten It, Pan Jisheng, Xiong Qihua, Chi Dongzhi, Wang Shijie
Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology and Research), 3, Research Link, Singapore 117602.
Nanoscale. 2015 Feb 14;7(6):2497-503. doi: 10.1039/c4nr06411a.
The two-dimensional layer of molybdenum disulfide (MoS2) exhibits promising prospects in the applications of optoelectronics and valleytronics. Herein, we report a successful new process for synthesizing wafer-scale MoS2 atomic layers on diverse substrates via magnetron sputtering. Spectroscopic and microscopic results reveal that these synthesized MoS2 layers are highly homogeneous and crystallized; moreover, uniform monolayers at wafer scale can be achieved. Raman and photoluminescence spectroscopy indicate comparable optical qualities of these as-grown MoS2 with other methods. The transistors composed of the MoS2 film exhibit p-type performance with an on/off current ratio of ∼10(3) and hole mobility of up to ∼12.2 cm(2) V(-1) s(-1). The strategy reported herein paves new ways towards the large scale growth of various two-dimensional semiconductors with the feasibility of controllable doping to realize desired p- or n-type devices.
二维二硫化钼（MoS2）层在光电子学和谷电子学应用中展现出广阔前景。在此，我们报道了一种通过磁控溅射在多种衬底上合成晶圆级MoS2原子层的成功新工艺。光谱和显微镜结果表明，这些合成的MoS2层高度均匀且结晶良好；此外，可实现晶圆级的均匀单层。拉曼光谱和光致发光光谱表明，这些生长态的MoS2与其他方法制备的具有相当的光学质量。由MoS2薄膜组成的晶体管表现出p型性能，开/关电流比约为10(3)，空穴迁移率高达约12.2 cm(2) V(-1) s(-1)。本文报道的策略为各种二维半导体的大规模生长开辟了新途径，并具有可控掺杂以实现所需p型或n型器件的可行性。
