Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China.
Physics Department & Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing, 210093, P. R. China.
Adv Mater. 2017 Aug;29(32). doi: 10.1002/adma.201605719. Epub 2017 Jun 21.
A major obstacle for the use of single-wall carbon nanotubes (SWCNTs) in electronic devices is their mixture of different types of electrical conductivity that strongly depends on their helical structure. The existence of metal impurities as a residue of a metallic growth catalyst may also lower the performance of SWCNT-based devices. Here, it is shown that by using silicon oxide (SiO ) nanoparticles as a catalyst, metal-free semiconducting and metallic SWCNTs can be selectively synthesized by the chemical vapor deposition of ethanol. It is found that control over the nanoparticle size and the content of oxygen in the SiO catalyst plays a key role in the selective growth of SWCNTs. Furthermore, by using the as-grown semiconducting and metallic SWCNTs as the channel material and source/drain electrodes, respectively, all-SWCNT thin-film transistors are fabricated to demonstrate the remarkable potential of these SWCNTs for electronic devices.
在电子器件中使用单壁碳纳米管（SWCNT）的一个主要障碍是它们具有不同类型的电导率，这强烈依赖于其螺旋结构。金属杂质的存在作为金属生长催化剂的残留物也可能降低基于 SWCNT 的器件的性能。在这里，通过使用氧化硅（SiO）纳米颗粒作为催化剂，通过乙醇的化学气相沉积可以选择性地合成无金属的半导体和金属 SWCNT。研究发现，对纳米颗粒尺寸和 SiO 催化剂中氧含量的控制在 SWCNT 的选择性生长中起着关键作用。此外，通过将生长的半导体和金属 SWCNT 分别用作沟道材料和源/漏电极，制造了全 SWCNT 薄膜晶体管，以证明这些 SWCNT 在电子器件中的巨大潜力。
