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PrGe 拓扑表面的巨型 Rashba 效应揭示反铁磁 spintronics。

Giant Rashba effect at the topological surface of PrGe revealing antiferromagnetic spintronics.

机构信息

Synchrotrons Utilization Section, Raja Ramanna Centre for Advanced Technology, Indore, 452013, India.

Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai, 400005, India.

出版信息

Sci Rep. 2017 Jun 23;7(1):4120. doi: 10.1038/s41598-017-02401-z.

DOI:10.1038/s41598-017-02401-z
PMID:28646153
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5482886/
Abstract

Rashba spin-orbit splitting in the magnetic materials opens up a new perspective in the field of spintronics. Here, we report a giant Rashba spin-orbit splitting on the PrGe [010] surface in the paramagnetic phase with Rashba coefficient α  = 5 eVÅ. We find that α can be tuned in this system as a function of temperature at different magnetic phases. Rashba type spin polarized surface states originates due to the strong hybridization between Pr 4f states with the conduction electrons. Significant changes observed in the spin polarized surface states across the magnetic transitions are due to the competition between Dzyaloshinsky-Moriya interaction and exchange interaction present in this system. Presence of Dzyaloshinsky-Moriya interaction on the topological surface give rise to Saddle point singularity which leads to electron-like and hole-like Rashba spin split bands in the [Formula: see text] and [Formula: see text] directions, respectively. Supporting evidences of Dzyaloshinsky-Moriya interaction have been obtained as anisotropic magnetoresistance with respect to field direction and first-order type hysteresis in the X-ray diffraction measurements. A giant negative magnetoresistance of 43% in the antiferromagnetic phase and tunable Rashba parameter with temperature makes this material a suitable candidate for application in the antiferromagnetic spintronic devices.

摘要

在磁性材料中,Rashba 自旋轨道分裂为自旋电子学领域开辟了新的视角。在这里,我们报告了在顺磁相中的 PrGe [010]表面上具有 Rashba 系数α=5 eVÅ的巨大 Rashba 自旋轨道分裂。我们发现,在不同的磁性相中,α 可以作为温度的函数在该系统中进行调节。由于 Pr 4f 态与传导电子之间的强烈杂化, Rashba 型自旋极化表面态起源于此。在磁转变过程中,在自旋极化表面态中观察到的显著变化是由于系统中存在 Dzyaloshinsky-Moriya 相互作用和交换相互作用之间的竞争所致。拓扑表面上存在 Dzyaloshinsky-Moriya 相互作用会导致鞍点奇点,从而导致在[Formula: see text]和[Formula: see text]方向上分别出现电子型和空穴型 Rashba 自旋分裂能带。通过对磁场方向的各向异性磁阻和 X 射线衍射测量中的一阶型磁滞现象获得了 Dzyaloshinsky-Moriya 相互作用的支持证据。在反铁磁相中具有 43%的巨大负磁阻和随温度可调的 Rashba 参数,使得这种材料成为反铁磁自旋电子器件应用的合适候选材料。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/11b8/5482886/b1c5614bbd5a/41598_2017_2401_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/11b8/5482886/0c7247c9c9e0/41598_2017_2401_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/11b8/5482886/4ca7e5357a84/41598_2017_2401_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/11b8/5482886/8a584a2944e8/41598_2017_2401_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/11b8/5482886/b1c5614bbd5a/41598_2017_2401_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/11b8/5482886/0c7247c9c9e0/41598_2017_2401_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/11b8/5482886/4ca7e5357a84/41598_2017_2401_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/11b8/5482886/8a584a2944e8/41598_2017_2401_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/11b8/5482886/b1c5614bbd5a/41598_2017_2401_Fig4_HTML.jpg

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2
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3
Tunable chiral spin texture in magnetic domain-walls.可调谐的磁性畴壁中的手性自旋结构。
由Cr 3d局域化驱动的CrSi中的大正磁电阻和Dzyaloshinskii-Moriya相互作用。
Sci Rep. 2020 Jul 21;10(1):12030. doi: 10.1038/s41598-020-67617-y.
Sci Rep. 2014 Jun 11;4:5248. doi: 10.1038/srep05248.
4
Rashba spin-orbit anisotropy and the electric field control of magnetism.Rashba自旋轨道各向异性与磁性的电场调控
Sci Rep. 2014 Feb 17;4:4105. doi: 10.1038/srep04105.
5
Revealing the properties of Mn2Au for antiferromagnetic spintronics.揭示 Mn2Au 在反铁磁自旋电子学中的性质。
Nat Commun. 2013;4:2892. doi: 10.1038/ncomms3892.
6
Antiferro- and ferromagnetic ordering in a PrGe single crystal.PrGe 单晶体中的反铁磁和铁磁有序。
J Phys Condens Matter. 2012 Nov 28;24(47):476001. doi: 10.1088/0953-8984/24/47/476001. Epub 2012 Oct 26.
7
Current-induced torques in magnetic materials.电流在磁性材料中产生的转矩。
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8
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A precise method for visualizing dispersive features in image plots.一种用于可视化图像图中色散特征的精确方法。
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Rev Sci Instrum. 2009 Apr;80(4):043105. doi: 10.1063/1.3119364.