Department of Physics, Dong-A University , Hadan-2-dong, Sahagu, Busan 49315, Korea.
Nano Lett. 2017 Jul 12;17(7):4365-4372. doi: 10.1021/acs.nanolett.7b01446. Epub 2017 Jun 29.
ZnTe nanotrees and nanowires were grown on fluorine-doped tin oxide glass by physical vapor transport. Sn from a fluorine-doped tin oxide layer catalyzed the growth at a growth temperature of 320 °C. Both the stem and branch nanowires grew along ⟨0001⟩ in the rarely observed wurtzite structure. SnTe nanostructures were formed in the liquid catalyst and simultaneously ZnTe nanowire grew under Te-limited conditions, which made the formation of the wurtzite structure energetically favorable. Through polarization-dependent and power-dependent microphotoluminescence measurements from individual wurtzite nanowires at room temperature, we could determine the so far unknown fundamental bandgap of wurtzite ZnTe, which was 2.297 eV and thus 37 meV higher than that of zinc-blend ZnTe. From the analysis of doublet photoluminescence spectra, the valence band splitting energy between heavy hole and light hole bands is estimated to be 69 meV.
ZnTe 纳米树和纳米线通过物理气相传输在掺氟氧化锡玻璃上生长。生长温度为 320°C 时,来自掺氟氧化锡层的 Sn 催化了生长。沿 ⟨0001⟩方向生长的纳米线的茎和分支都具有在很少观察到的纤锌矿结构中生长。SnTe 纳米结构在液体催化剂中形成,同时在 Te 受限条件下 ZnTe 纳米线生长,这使得纤锌矿结构的形成在能量上是有利的。通过室温下来自单个纤锌矿纳米线的偏振相关和功率相关微光致发光测量,我们可以确定迄今为止未知的纤锌矿 ZnTe 的基本带隙,为 2.297 eV,比闪锌矿 ZnTe 高 37 meV。从双峰光致发光光谱的分析中,估算出重空穴带和轻空穴带之间的价带分裂能为 69 meV。