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本文引用的文献

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Gate-tuned normal and superconducting transport at the surface of a topological insulator.拓扑绝缘体表面的门控正常和超导输运。
Nat Commun. 2011 Dec 6;2:575. doi: 10.1038/ncomms1586.
2
Quantum Hall effect from the topological surface states of strained bulk HgTe.应变体 HgTe 的拓扑表面态中的量子霍尔效应。
Phys Rev Lett. 2011 Mar 25;106(12):126803. doi: 10.1103/PhysRevLett.106.126803. Epub 2011 Mar 22.
3
Manipulating surface states in topological insulator nanoribbons.拓扑绝缘体纳米带中的表面态调控。
Nat Nanotechnol. 2011 Apr;6(4):216-21. doi: 10.1038/nnano.2011.19. Epub 2011 Feb 13.
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Quantum oscillations and hall anomaly of surface states in the topological insulator Bi2Te3.拓扑绝缘体 Bi2Te3 中表面态的量子振荡和 hall 反常。
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Quantum theory of orbital magnetization and its generalization to interacting systems.轨道磁化的量子理论及其对相互作用系统的推广。
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Landau-level degeneracy and quantum Hall effect in a graphite bilayer.石墨双层中的朗道能级简并与量子霍尔效应。
Phys Rev Lett. 2006 Mar 3;96(8):086805. doi: 10.1103/PhysRevLett.96.086805.
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Experimental observation of the quantum Hall effect and Berry's phase in graphene.石墨烯中量子霍尔效应和贝里相位的实验观察。
Nature. 2005 Nov 10;438(7065):201-4. doi: 10.1038/nature04235.
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Two-dimensional gas of massless Dirac fermions in graphene.石墨烯中无质量狄拉克费米子的二维气体。
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9
Berry phase correction to electron density of states in solids.固体中态密度的贝里相位修正。
Phys Rev Lett. 2005 Sep 23;95(13):137204. doi: 10.1103/PhysRevLett.95.137204. Epub 2005 Sep 22.
10
Weak field phase diagram for an integer quantum Hall liquid.整数量子霍尔液体的弱场相图。
Phys Rev Lett. 1996 Feb 5;76(6):975-978. doi: 10.1103/PhysRevLett.76.975.

无磁场下朗道能级中的磁响应函数。

Zero-field magnetic response functions in Landau levels.

机构信息

Department of Physics, The University of Texas at Austin, Austin, TX 78712;

Department of Physics, The University of Texas at Austin, Austin, TX 78712.

出版信息

Proc Natl Acad Sci U S A. 2017 Jul 11;114(28):7295-7300. doi: 10.1073/pnas.1702595114. Epub 2017 Jun 27.

DOI:10.1073/pnas.1702595114
PMID:28655849
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5514734/
Abstract

We present a fresh perspective on the Landau level quantization rule; that is, by successively including zero-field magnetic response functions at zero temperature, such as zero-field magnetization and susceptibility, the Onsager's rule can be corrected order by order. Such a perspective is further reinterpreted as a quantization of the semiclassical electron density in solids. Our theory not only reproduces Onsager's rule at zeroth order and the Berry phase and magnetic moment correction at first order but also explains the nature of higher-order corrections in a universal way. In applications, those higher-order corrections are expected to curve the linear relation between the level index and the inverse of the magnetic field, as already observed in experiments. Our theory then provides a way to extract the correct value of Berry phase as well as the magnetic susceptibility at zero temperature from Landau level fan diagrams in experiments. Moreover, it can be used theoretically to calculate Landau levels up to second-order accuracy for realistic models.

摘要

我们提出了朗道能级量子化规则的新视角;也就是说,通过依次包含零场温度下的磁响应函数,如零场磁化率和磁化率,我们可以对昂萨格(Onsager)规则进行逐阶修正。这种视角可以进一步重新解释为固体中半经典电子密度的量子化。我们的理论不仅在零阶重现了昂萨格(Onsager)规则以及一阶的贝里(Berry)相位和磁矩修正,而且还以通用的方式解释了高阶修正的本质。在应用中,这些高阶修正有望使能级指数与磁场的倒数之间的线性关系发生弯曲,这已经在实验中观察到了。因此,我们的理论为从实验中的朗道能级扇形图中提取正确的贝里相位和零温磁化率提供了一种方法。此外,它可以在理论上用于计算二阶精度的现实模型的朗道能级。