State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences , 5625 Renmin Street, Changchun, Jilin 130022, P. R. China.
University of Chinese Academy of Sciences , Beijing 100049, China.
ACS Appl Mater Interfaces. 2017 Jul 19;9(28):23878-23883. doi: 10.1021/acsami.7b07796. Epub 2017 Jul 7.
In our recent report (ACS Appl. Mater. Interfaces 2016, 8, 5308), Li ions had been successfully incorporated into the lattice of the selenized CuZnSn(S,Se) thin film on a quartz substrate by substituting equivalent Cu ions, and Li ions was also found to have the little effect on the crystal growth and defect passivation. To further improve the cell performance of Li-doped CZTSSe devices, we conducted the same experiments on the sodium-rich soda-lime glass (SLG) substrate in this study, instead of sodium-free quartz substrate. Surprisingly, only trace amounts of Li (Li/Cu molar ratio ∼1 × 10) were detected in the final CZTSSe thin films; meanwhile, a large amount of sodium was present on the surface and at the grain boundaries of the selenized thin films. A Li/Na exchange mechanism is used to explain this phenomenon. Only on the sodium-free substrate can Li ions enter the CZTSSe host lattice, and doping Li ions on the SLG substrate are nearly identical to doping Na ions.
在我们最近的报告(ACS Appl. Mater. Interfaces 2016, 8, 5308)中,通过取代等量的 Cu 离子,成功地将锂离子掺入到石英衬底上硒化的 CuZnSn(S,Se)薄膜的晶格中,并且还发现锂离子对晶体生长和缺陷钝化几乎没有影响。为了进一步提高掺杂 Li 的 CZTSSe 器件的电池性能,我们在这项研究中用富钠的苏打石灰玻璃(SLG)衬底代替无钠的石英衬底进行了相同的实验。令人惊讶的是,最终的 CZTSSe 薄膜中仅检测到痕量的 Li(Li/Cu 摩尔比约为 1×10);同时,在硒化薄膜的表面和晶界处存在大量的钠。用 Li/Na 交换机制来解释这一现象。只有在无钠衬底上,Li 离子才能进入 CZTSSe 主体晶格,而在 SLG 衬底上掺杂 Li 离子与掺杂 Na 离子几乎相同。