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表面电势建模与重构在 Kelvin 探针力显微镜中的应用。

Surface potential modeling and reconstruction in Kelvin probe force microscopy.

机构信息

Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China. National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China.

出版信息

Nanotechnology. 2017 Sep 8;28(36):365705. doi: 10.1088/1361-6528/aa7cbc. Epub 2017 Jun 30.

Abstract

Kelvin probe force microscopy (KPFM) measurement has been extensively applied in metallic, semiconductor and organic electronic or photovoltaic devices, to characterize the local contact potential difference or surface potential of the samples at the nanoscale. Here, a comprehensive modeling of surface potential in KPFM is established, from the well-known single capacitance model to a precise electrodynamic model, considering the long range property of the electrostatic force in KPFM. The limitations and relations of different models are also discussed. Besides, the feedback condition of the KPFM system is reconsidered and modified, showing that the influence of the cantilever has been overestimated by about 20% in previous reports. Afterwards, the surface potential of charged Si-nanocrystals is reconstructed based on the electrodynamic model, and the calculated surface charge density is very consistent with the macroscopic capacitance-voltage (C-V) measurement. A deep understanding and correct reconstruction of surface potential is crucial to the quantitative analysis of KPFM results.

摘要

Kelvin 探针力显微镜(KPFM)测量已广泛应用于金属、半导体和有机电子或光伏器件中,以表征纳米尺度下样品的局部接触电位差或表面电势。在这里,建立了一个从著名的单电容模型到精确的电动力学模型的全面的 KPFM 表面电势模型,考虑了 KPFM 中静电力的长程性质。还讨论了不同模型的局限性和关系。此外,重新考虑并修改了 KPFM 系统的反馈条件,表明在以前的报告中,悬臂的影响被高估了约 20%。之后,基于电动力学模型重建了带电 Si 纳米晶体的表面电势,计算出的表面电荷密度与宏观电容-电压(C-V)测量非常吻合。对表面电势的深入理解和正确重建对于 KPFM 结果的定量分析至关重要。

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