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简化扫描透射电子显微镜(STEM)中的电子束沟道效应

Simplifying Electron Beam Channeling in Scanning Transmission Electron Microscopy (STEM).

作者信息

Wu Ryan J, Mittal Anudha, Odlyzko Michael L, Mkhoyan K Andre

机构信息

Department of Chemical Engineering and Materials Science,University of Minnesota,Minneapolis,MN 55455,USA.

出版信息

Microsc Microanal. 2017 Aug;23(4):794-808. doi: 10.1017/S143192761700068X. Epub 2017 Jul 4.

DOI:10.1017/S143192761700068X
PMID:28673372
Abstract

Sub-angstrom scanning transmission electron microscopy (STEM) allows quantitative column-by-column analysis of crystalline specimens via annular dark-field images. The intensity of electrons scattered from a particular location in an atomic column depends on the intensity of the electron probe at that location. Electron beam channeling causes oscillations in the STEM probe intensity during specimen propagation, which leads to differences in the beam intensity incident at different depths. Understanding the parameters that control this complex behavior is critical for interpreting experimental STEM results. In this work, theoretical analysis of the STEM probe intensity reveals that intensity oscillations during specimen propagation are regulated by changes in the beam's angular distribution. Three distinct regimes of channeling behavior are observed: the high-atomic-number (Z) regime, in which atomic scattering leads to significant angular redistribution of the beam; the low-Z regime, in which the probe's initial angular distribution controls intensity oscillations; and the intermediate-Z regime, in which the behavior is mixed. These contrasting regimes are shown to exist for a wide range of probe parameters. These results provide a new understanding of the occurrence and consequences of channeling phenomena and conditions under which their influence is strengthened or weakened by characteristics of the electron probe and sample.

摘要

亚埃级扫描透射电子显微镜(STEM)能够通过环形暗场图像对晶体样本进行逐列定量分析。从原子列中特定位置散射的电子强度取决于该位置处电子探针的强度。在样本传播过程中,电子束沟道效应会导致STEM探针强度发生振荡,这会导致入射到不同深度的束流强度出现差异。了解控制这种复杂行为的参数对于解释STEM实验结果至关重要。在这项工作中,对STEM探针强度的理论分析表明,样本传播过程中的强度振荡受束流角分布变化的调节。观察到三种不同的沟道行为模式:高原子序数(Z)模式,其中原子散射会导致束流显著的角重新分布;低Z模式,其中探针的初始角分布控制强度振荡;以及中间Z模式,其行为是混合的。这些截然不同的模式在广泛的探针参数范围内均存在。这些结果为沟道现象的发生、后果以及电子探针和样本特性增强或减弱其影响的条件提供了新的认识。

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