Dycus J H, Lebeau J M
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina, U.S.A.
J Microsc. 2017 Dec;268(3):225-229. doi: 10.1111/jmi.12601. Epub 2017 Jul 7.
Here, we present a sample preparation approach that simplifies the thinning of very brittle wide bandgap semiconducting materials in cross-section geometry for (scanning) transmission electron microscopy. Using AlN thin films grown on sapphire and AlN substrates as case studies, we demonstrate that high-quality samples can be routinely prepared while greatly reducing the preparation time and consumables cost. The approach removes the sample preparation barrier to studying a wide variety of materials by electron microscopy.
在此，我们提出一种样品制备方法，该方法简化了用于（扫描）透射电子显微镜的横截面几何形状的极脆宽带隙半导体材料的减薄过程。以生长在蓝宝石和氮化铝衬底上的氮化铝薄膜作为案例研究，我们证明可以常规制备高质量样品，同时大幅减少制备时间和耗材成本。该方法消除了通过电子显微镜研究各种材料时的样品制备障碍。
