• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

在蓝宝石衬底上制备铌/铝多层薄膜的横截面透射电子显微镜样本。

The preparation of cross-sectional transmission electron microscopy specimens of Nb/Al multilayer thin films on sapphire substrates.

作者信息

Barmak K, Rudman D A, Foner S

机构信息

Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge 02139.

出版信息

J Electron Microsc Tech. 1990 Nov;16(3):249-53. doi: 10.1002/jemt.1060160306.

DOI:10.1002/jemt.1060160306
PMID:2243281
Abstract

We have developed a technique for preparation of cross-sectional transmission electron microscopy samples of reacted and unreacted Nb/Al multilayer thin films on sapphire substrates. The choice of substrate was found to be extremely important. Sapphire sputters more slowly than Nb and Nb-compounds and therefore makes it possible to obtain the electron transparent regions in the thin films rather than in the substrate. However, the brittle nature of the sapphire restricts the types of thinning techniques that can be used, requiring extensive ion thinning as a final stage.

摘要

我们已经开发出一种技术,用于制备反应和未反应的蓝宝石衬底上的Nb/Al多层薄膜的横截面透射电子显微镜样品。发现衬底的选择极为重要。蓝宝石的溅射速度比铌和铌化合物慢,因此有可能在薄膜而非衬底中获得电子透明区域。然而,蓝宝石的脆性限制了可使用的减薄技术类型,需要在最后阶段进行大量离子减薄。

相似文献

1
The preparation of cross-sectional transmission electron microscopy specimens of Nb/Al multilayer thin films on sapphire substrates.在蓝宝石衬底上制备铌/铝多层薄膜的横截面透射电子显微镜样本。
J Electron Microsc Tech. 1990 Nov;16(3):249-53. doi: 10.1002/jemt.1060160306.
2
A high-throughput approach for cross-sectional transmission electron microscopy sample preparation of thin films.一种用于薄膜横截面透射电子显微镜样品制备的高通量方法。
J Electron Microsc (Tokyo). 2008 Dec;57(6):189-94. doi: 10.1093/jmicro/dfn021. Epub 2008 Nov 4.
3
Preparation of TEM foils from Nb-10 a/o Si.
Microsc Res Tech. 1992 Aug 1;22(3):298-300. doi: 10.1002/jemt.1070220307.
4
Novel method for the plan-view TEM preparation of thin samples on brittle substrates by mechanical and ion beam thinning.通过机械和离子束减薄在脆性衬底上制备平面透射电子显微镜薄样品的新方法。
Microsc Res Tech. 2002 Feb 15;56(4):308-14. doi: 10.1002/jemt.10034.
5
A novel technique for the preparation of thin films for cross-sectional transmission electron microscopy.一种用于制备用于横截面透射电子显微镜的薄膜的新技术。
J Electron Microsc Tech. 1990 Jan;14(1):79-82. doi: 10.1002/jemt.1060140112.
6
Preparation of cross-section specimens for transmission electron microscopy from alpha-Al2O3/Ni solid state bonded bicrystal interfaces.
Microsc Res Tech. 1992 Nov 1;23(3):248-51. doi: 10.1002/jemt.1070230309.
7
Preparation of cross-sectional specimens of ceramic thermal barrier coatings for transmission electron microscopy.用于透射电子显微镜的陶瓷热障涂层横截面试样的制备。
J Electron Microsc Tech. 1990 Apr;14(4):307-12. doi: 10.1002/jemt.1060140404.
8
Microstructural investigation of nickel silicide thin films and the silicide-silicon interface using transmission electron microscopy.利用透射电子显微镜对硅化镍薄膜及硅化物-硅界面进行微观结构研究。
Micron. 2009 Jan;40(1):11-4. doi: 10.1016/j.micron.2008.01.012. Epub 2008 Feb 2.
9
Cross-sectional transmission electron microscopy of silicon LSI circuits and Josephson junction devices.硅大规模集成电路和约瑟夫森结器件的横断面透射电子显微镜检查。
J Electron Microsc Tech. 1987 Dec;7(4):319-22. doi: 10.1002/jemt.1060070411.
10
A novel method for the cross-sectional TEM preparation of thin films deposited onto water-soluble substrates.
Microsc Res Tech. 1993 Jul 1;25(4):346-9. doi: 10.1002/jemt.1070250412.