Saha Institute of Nuclear Physics, HBNI, 1/AF Bidhannagar, Calcutta, 700 064, India.
Goverment General Degree College, Singur, Hooghly, 712409, India.
Sci Rep. 2017 Jul 7;7(1):4883. doi: 10.1038/s41598-017-05164-9.
We report semiconductor to metal-like crossover in the temperature dependence of resistivity (ρ) due to the switching of charge transport from bulk to surface channel in three-dimensional topological insulator BiSbTeSe. Unlike earlier studies, a much sharper drop in ρ(T) is observed below the crossover temperature due to the dominant surface conduction. Remarkably, the resistivity of the conducting surface channel follows a rarely observable T dependence at low temperature, as predicted theoretically for a two-dimensional Fermi liquid system. The field dependence of magnetization shows a cusp-like paramagnetic peak in the susceptibility (χ) at zero field over the diamagnetic background. The peak is found to be robust against temperature and χ decays linearly with the field from its zero-field value. This unique behavior of the χ is associated with the spin-momentum locked topological surface state in BiSbTeSe. The reconstruction of the surface state with time is clearly reflected through the reduction of the peak height with the age of the sample.
我们报告了由于在三维拓扑绝缘体 BiSbTeSe 中电荷输运从体相通道切换到表面通道,电阻率(ρ)随温度的变化出现半导体到金属样的转变。与早期的研究不同,由于表面传导占主导地位,在转变温度以下 ρ(T) 观察到更急剧的下降。值得注意的是,低温下,由于理论上预测的二维费米液体系统,传导的表面通道的电阻率遵循很少观察到的 T 依赖性。在零磁场下,磁化率(χ)中的磁场依赖性在反铁磁背景上显示出类尖峰的顺磁峰。发现该峰对温度稳定,并且 χ 从其零场值随磁场线性衰减。χ 的这种独特行为与 BiSbTeSe 中自旋-动量锁定的拓扑表面态有关。通过减少样品的老化时间,表面态的重建通过峰高的降低而得到明显反映。