Ko Wonhee, Jeon Insu, Kim Hyo Won, Kwon Hyeokshin, Kahng Se-Jong, Park Joonbum, Kim Jun Sung, Hwang Sung Woo, Suh Hwansoo
Frontier Research Lab., Samsung Advanced Institute of Technology, Yongin 446-712, Korea.
Sci Rep. 2013;3:2656. doi: 10.1038/srep02656.
Bi2-xSbxTe3-ySey has been argued to exhibit both topological surface states and insulating bulk states, but has not yet been studied with local probes on the atomic scale. Here we report on the atomic and electronic structures of Bi1.5Sb0.5Te1.7Se1.3 studied using scanning tunnelling microscopy (STM) and spectroscopy (STS). Although there is significant surface disorder due to alloying of constituent atoms, cleaved surfaces of the crystals present a well-ordered hexagonal lattice with 10 Å high quintuple layer steps. STS results reflect the band structure and indicate that the surface state and Fermi energy are both located inside the energy gap. In particular, quasi-particle interference patterns from electron scattering demonstrate that the surface states possess linear dispersion and chirality from spin texture, thus verifying its topological nature. This finding demonstrates that alloying is a promising route to achieve full suppression of bulk conduction in topological insulators whilst keeping the topological surface state intact.
Bi2 - xSbxTe3 - ySey被认为既表现出拓扑表面态又具有绝缘体态,但尚未在原子尺度上用局域探针进行研究。在此,我们报告了使用扫描隧道显微镜(STM)和光谱学(STS)对Bi1.5Sb0.5Te1.7Se1.3的原子和电子结构的研究。尽管由于组成原子的合金化存在显著的表面无序,但晶体的解理面呈现出具有10 Å高的五重层台阶的有序六边形晶格。STS结果反映了能带结构,并表明表面态和费米能都位于能隙内。特别是,电子散射产生的准粒子干涉图案表明,表面态具有线性色散和来自自旋纹理的手性,从而证实了其拓扑性质。这一发现表明,合金化是在拓扑绝缘体中实现完全抑制体态传导同时保持拓扑表面态完整的一条有前景的途径。