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ZrTe 单晶体中体相的三维狄拉克锥态和表面的拓扑狄拉克费米子共存。

Coexistence of topological Dirac fermions on the surface and three-dimensional Dirac cone state in the bulk of ZrTe single crystal.

机构信息

Saha Institute of Nuclear Physics, HBNI, 1/AF Bidhannagar, Calcutta 700 064, India.

出版信息

Sci Rep. 2017 Jan 9;7:40327. doi: 10.1038/srep40327.

Abstract

Although, the long-standing debate on the resistivity anomaly in ZrTe somewhat comes to an end, the exact topological nature of the electronic band structure remains elusive till today. Theoretical calculations predicted that bulk ZrTe to be either a weak or a strong three-dimensional (3D) topological insulator. However, the angle resolved photoemission spectroscopy and transport measurements clearly demonstrate 3D Dirac cone state with a small mass gap between the valence band and conduction band in the bulk. From the magnetization and magneto-transport measurements on ZrTe single crystal, we have detected both the signature of helical spin texture from topological surface state and chiral anomaly associated with the 3D Dirac cone state in the bulk. This implies that ZrTe hosts a novel electronic phase of material, having massless Dirac fermionic excitation in its bulk gap state, unlike earlier reported 3D topological insulators. Apart from the band topology, it is also apparent from the resistivity and Hall measurements that the anomalous peak in the resistivity can be shifted to a much lower temperature (T < 2 K) by controlling impurity and defects.

摘要

尽管关于 ZrTe 电阻率异常的长期争论已经告一段落,但电子能带结构的准确拓扑性质至今仍未被揭示。理论计算预测块状 ZrTe 要么是弱拓扑绝缘体,要么是强拓扑绝缘体。然而,角分辨光电子能谱和输运测量清楚地表明,在体相中存在三维狄拉克锥态,价带和导带之间存在小的质量间隙。从 ZrTe 单晶的磁化和磁输运测量中,我们已经在体相中检测到了拓扑表面态的螺旋自旋织构特征以及与三维狄拉克锥态相关的手性反常。这意味着 ZrTe 拥有一种新型的电子相材料,在其体带隙态中存在无质量的狄拉克费米子激发,这与之前报道的三维拓扑绝缘体不同。除了能带拓扑之外,从电阻率和霍尔测量中也可以明显看出,通过控制杂质和缺陷,电阻率中的异常峰可以被移到更低的温度(T < 2 K)。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/beab/5220326/8b2f016b7263/srep40327-f1.jpg

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