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具有磷烯结构的二维硅和单硫属碳化物。

Two-dimensional silicon and carbon monochalcogenides with the structure of phosphorene.

作者信息

Rocca Dario, Abboud Ali, Vaitheeswaran Ganapathy, Lebègue Sébastien

机构信息

Université de Lorraine, CRM2, UMR 7036, Vandoeuvre-lès-Nancy, F-54506, France.

CNRS, CRM2, UMR 7036, Vandoeuvre-lès-Nancy, F-54506, France.

出版信息

Beilstein J Nanotechnol. 2017 Jun 29;8:1338-1344. doi: 10.3762/bjnano.8.135. eCollection 2017.

DOI:10.3762/bjnano.8.135
PMID:28690969
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5496568/
Abstract

Phosphorene has recently attracted significant interest for applications in electronics and optoelectronics. Inspired by this material an ab initio study was carried out on new two-dimensional binary materials with a structure analogous to phosphorene. Specifically, carbon and silicon monochalcogenides have been considered. After structural optimization, a series of binary compounds were found to be dynamically stable in a phosphorene-like geometry: CS, CSe, CTe, SiO, SiS, SiSe, and SiTe. The electronic properties of these monolayers were determined using density functional theory. By using accurate hybrid functionals it was found that these materials are semiconductors and span a broad range of bandgap values and types. Similarly to phosphorene, the computed effective masses point to a strong in-plane anisotropy of carrier mobilities. The variety of electronic properties carried by these compounds have the potential to broaden the technological applicability of two-dimensional materials.

摘要

最近,磷烯在电子学和光电子学应用中引起了极大的关注。受这种材料的启发,对具有类似于磷烯结构的新型二维二元材料进行了从头算研究。具体而言,考虑了碳和硅的单硫属化物。经过结构优化后,发现一系列二元化合物在类似磷烯的几何结构中是动态稳定的:CS、CSe、CTe、SiO、SiS、SiSe和SiTe。使用密度泛函理论确定了这些单层的电子性质。通过使用精确的杂化泛函,发现这些材料是半导体,具有广泛的带隙值和类型。与磷烯类似,计算得到的有效质量表明载流子迁移率具有很强的面内各向异性。这些化合物所具有的多种电子性质有可能拓宽二维材料的技术应用范围。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b4f2/5496568/43289dee8000/Beilstein_J_Nanotechnol-08-1338-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b4f2/5496568/4f843b88587b/Beilstein_J_Nanotechnol-08-1338-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b4f2/5496568/df0cc03e6c5e/Beilstein_J_Nanotechnol-08-1338-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b4f2/5496568/43289dee8000/Beilstein_J_Nanotechnol-08-1338-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b4f2/5496568/4f843b88587b/Beilstein_J_Nanotechnol-08-1338-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b4f2/5496568/df0cc03e6c5e/Beilstein_J_Nanotechnol-08-1338-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b4f2/5496568/43289dee8000/Beilstein_J_Nanotechnol-08-1338-g004.jpg

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本文引用的文献

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